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Product Detailed Parameters
- Description：IGBT 650V 30A TO220-3
- Series：TrenchStop®
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：30 A
- Current - Collector Pulsed (Icm)：45 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 15A
- Power - Max：105 W
- Switching Energy：130µJ (on), 40µJ (off)
- Input Type：Standard
- Gate Charge：38 nC
- Td (on/off) @ 25°C：17ns/150ns
- Test Condition：400V, 7.5A, 39Ohm, 15V
- Reverse Recovery Time (trr)：50 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：PG-TO220-3
- Grade：-
- Qualification：-
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Overview
The IKP15N65F5XKSA1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies, belonging to the TRENCHSTOP 5 F5 series. It utilizes silicon technology and features a TO-220FP-3 through-hole package. Key electrical parameters include a maximum collector-emitter voltage of 650 V and a continuous collector current of 18 A at 25°C. The device exhibits a typical collector-emitter saturation voltage of 1.6 V and a power dissipation rating of 52.5 W. It operates within a junction temperature range of -40°C to +175°C.
Feature Summary
- Incorporates TRENCHSTOP 5 F5 technology for optimized switching performance and low conduction losses.
- Designed for robust operation with high thermal stability across a wide temperature range.
- Features a standard single configuration suitable for various power switching applications.
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Welding equipment
Procurement Notes
Verify component authenticity by checking the manufacturer's marking on the TO-220FP-3 package against official datasheet specifications. Ensure the ordering suffix matches the required variant. Confirm RoHS compliance status through the manufacturer's certificate before integration into regulated electronic assemblies.
Selection Notes
Select this IGBT for applications requiring 650 V blocking capability and moderate current handling up to 18 A. Consider the TO-220FP-3 package for through-hole mounting constraints. Evaluate thermal management requirements based on the 52.5 W power dissipation limit and ensure gate drive voltages remain within the specified ±20 V range.
Part Context
This component is part of Infineon's TRENCHSTOP 5 family, which represents an evolution in IGBT technology focusing on efficiency improvements over previous generations. The F5 suffix denotes specific internal cell architecture optimizations. It serves as a discrete power switch alternative to integrated modules in lower-power industrial systems.
Replacement Considerations
Direct pin-compatible alternatives within the same series include IKA15N65F5XKSA1. Verify electrical parameter equivalence, particularly saturation voltage and switching times, when substituting with other 650 V IGBTs in the TO-220FP-3 package.
