IKQ100N120CH7XKSA1

$9.33

Description：IGBT TRENCH FS 1200V 166A TO247
Series：TRENCHSTOP™

SKU:e538bfaa5791 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 1200V 166A TO247
Series：TRENCHSTOP™
Mfr：Infineon Technologies
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：166 A
Current - Collector Pulsed (Icm)：400 A
Vce(on) (Max) @ Vge, Ic：2.15V @ 15V, 100A
Power - Max：721 W
Switching Energy：6.7mJ (on), 2.52mJ (off)
Input Type：Standard
Gate Charge：696 nC
Td (on/off) @ 25°C：66ns/547ns
Test Condition：-
Reverse Recovery Time (trr)：148 ns
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：PG-TO247-3-U01
Grade：-
Qualification：-

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IKQ100N120CH7XKSA1

Overview

The IKQ100N120CH7XKSA1 is a high-speed 1200 V IGBT from Infineon's TRENCHSTOP™ IGBT 7 family, housed in a PG-TO247-3-PLUS package. It integrates an emitter-controlled 7 Rapid diode with full rated current capability. Key electrical parameters include a collector-emitter saturation voltage of 1.7 V at 25°C and a maximum junction temperature of 175°C. The device supports a DC collector current of 166 A at 25°C and features optimized switching characteristics for hard-switching topologies.

Feature Summary

Co-packaged with a full-rated-current, soft-commutating ultra-fast recovery diode featuring low reverse recovery charge.
Optimized for high efficiency in high-speed hard-switching applications such as two-level inverters and three-level NPC T-type converters.
Facilitates easy paralleling through the positive temperature coefficient inherent in the collector-emitter saturation voltage.

Applications

Industrial UPS systems
Electric vehicle charging infrastructure
String solar inverters
Welding equipment

Procurement Notes

Verify component authenticity by cross-referencing the manufacturer marking K100MCH7 against official datasheet specifications. Confirm compliance with RoHS standards and lead-free plating requirements. Ensure sourcing channels provide valid traceability documentation to mitigate counterfeit risks during procurement.

Selection Notes

Select this component for designs requiring high-speed switching performance within industrial power conversion architectures. Evaluate thermal management strategies based on the specified junction-to-case thermal resistance values. Consider gate resistor selection to optimize switching energy losses while maintaining safe operating area limits under varying load conditions.

Part Context

This discrete semiconductor belongs to the TRENCHSTOP™ IGBT 7 product line, engineered for advanced power electronics. It utilizes silicon technology to deliver superior switching speed and conduction efficiency compared to previous generations. The specific model designation indicates its integration into the broader portfolio of high-voltage insulated-gate bipolar transistors designed for robust industrial environments.

Replacement Considerations

Consult official Infineon documentation for qualified substitute part numbers before implementation. Verify that any alternative device matches the required voltage rating, current capacity, and package dimensions to ensure mechanical and electrical compatibility within the existing circuit design constraints.