SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IKQ100N120CS7 is a short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology device copacked with a soft, fast recovery Emitter Controlled 7 diode. It features a collector-emitter voltage of 1200 V and a DC collector current of 100 A at case temperatures up to 100°C. The IGBT exhibits a low saturation voltage of 2.0 V at 175°C junction temperature. Short circuit ruggedness is rated for 8 µs. The component utilizes a PG-TO247-3-PLUS package.
Verify the specific ordering suffix KSA1 against official Infineon documentation to confirm exact marking and packaging details. Ensure compatibility with JEDEC47/20/22 industrial application standards. Confirm thermal management requirements align with the specified junction-to-case thermal resistance values provided in the datasheet tables.
Select this component for applications requiring high short circuit ruggedness and optimized hard switching performance. Consider the 1200 V rating and 100 A continuous current capability for industrial power conversion tasks. Evaluate the TRENCHSTOP™ IGBT 7 technology benefits for efficiency in solar inverter and drive systems where low saturation voltage is critical.
This part belongs to the IKQ series of TRENCHSTOP™ IGBT 7 devices from Infineon Technologies. It integrates an IGBT and a diode in a single TO-247PLUS package. The product is designed for robust industrial environments and is qualified according to relevant JEDEC tests for industrial applications.
Consult official Infineon cross-reference guides for verified substitutes. No specific substitute part numbers are confirmed in the provided source material.