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The IKQ120N60TA is a third-generation TRENCHSTOPTM IGBT with Fieldstop technology and an integrated Emitter Controlled anti-parallel diode. It operates at 600V collector-emitter voltage and supports up to 120A continuous DC collector current at 25°C case temperature, rising to 160A pulsed. The device features a low saturation voltage of 1.5V (typical) and a maximum junction temperature of 175°C. Packaged in PG-TO247-3, it offers high ruggedness, short circuit withstand capability of 5µs, and optimized switching characteristics for industrial power control.
Verify the specific ordering suffix against Infineon's official documentation to confirm package type and marking details. Confirm that the component meets the required automotive qualification standards if used in vehicle systems. Ensure thermal management designs account for the specified junction-to-case thermal resistance values under actual operating conditions.
Select this component for applications requiring high current density and robust short-circuit protection. The positive temperature coefficient aids in reliable parallel operation without active current sharing. Consider the gate charge requirements for driver selection to optimize switching losses within the desired frequency range.
This part belongs to Infineon's Low-Loss DuoPack series utilizing third-generation TRENCHSTOPTM technology. It is designed specifically for demanding industrial and automotive power conversion environments where efficiency and reliability are critical. The integration of the anti-parallel diode simplifies circuit design by reducing component count and parasitic inductance.
IKQ120N60TXKSA1
The device can withstand a short circuit for up to 5 microseconds when VGE is 15.0V and VCC is less than or equal to 400V.
Yes, the IKQ120N60TA is qualified according to the Automotive AEC-Q101 standard.
The integrated anti-parallel diode uses Emitter Controlled (HE) technology, offering soft and fast recovery characteristics.