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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 160A TO247-3
- Series：TRENCHSTOP™
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：160 A
- Current - Collector Pulsed (Icm)：600 A
- Vce(on) (Max) @ Vge, Ic：1.65V @ 15V, 150A
- Power - Max：621 W
- Switching Energy：5.8mJ (on), 5.4mJ (off)
- Input Type：Standard
- Gate Charge：301 nC
- Td (on/off) @ 25°C：45ns/341ns
- Test Condition：400V, 150A, 10Ohm, 15V
- Reverse Recovery Time (trr)：84 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：PG-TO247-3-46
- Grade：-
- Qualification：-
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Overview
The IKQ150N65EH7 is a high-speed, low saturation voltage 650 V TRENCHSTOP™ IGBT7 copacked with a soft, fast recovery Emitter Controlled 7 diode. It features a collector current of 150 A and operates within a junction temperature range of -40 °C to 175 °C. The device utilizes a TO-247PLUS-3 package with an internal emitter inductance of 13 nH. Key electrical characteristics include a maximum collector-emitter voltage of 650 V, a typical gate charge of 301 nC, and a turn-off energy of 5.4 mJ at 25 °C.
Feature Summary
- High speed and low saturation voltage utilizing TRENCHSTOP™ IGBT7 technology
- Soft, fast recovery antiparallel diode for smooth switching behavior
- Optimized for hard switching, two-level, and three-level topologies
- Humidity robustness ensuring reliability under various environmental conditions
Applications
- Industrial UPS
- EV-Charging
- String inverter
- Welding
Procurement Notes
Verify the specific ordering suffix against official Infineon documentation to confirm exact packaging and reel specifications. Confirm that the component meets JEDEC47/20/22 industrial qualification standards required for your application. Ensure thermal management designs account for the specified junction-to-case thermal resistance values provided in the datasheet.
Selection Notes
Select this component for applications requiring high efficiency and fast switching speeds in power conversion systems. Consider the low saturation voltage for reduced conduction losses and the optimized switching characteristics for hard-switching topologies. Evaluate the thermal performance based on the specific case temperature and ambient operating conditions of the target design.
Part Context
This part belongs to the TRENCHSTOP™ IGBT7 family from Infineon Technologies. It represents a discrete power semiconductor designed for high-performance industrial and automotive-grade applications. The device integrates advanced silicon technology to deliver superior switching performance compared to previous generations.
Replacement Considerations
Consult official Infineon cross-reference documents for verified substitutes. Ensure any replacement matches the 650 V rating, 150 A current capability, and TO-247PLUS-3 package dimensions. Verify compatibility with existing gate drive requirements and thermal interface materials.
