IKQ75N120CH3XKSA1

$11.06

Description：IGBT 1200V 150A TO247-3-46
Series：-

SKU:f676c14678ca Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 1200V 150A TO247-3-46
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：150 A
Current - Collector Pulsed (Icm)：300 A
Vce(on) (Max) @ Vge, Ic：2.35V @ 15V, 75A
Power - Max：938 W
Switching Energy：6.4mJ (on), 2.8mJ (off)
Input Type：Standard
Gate Charge：370 nC
Td (on/off) @ 25°C：34ns/282ns
Test Condition：600V, 75A, 6Ohm, 15V
Reverse Recovery Time (trr)：-
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：PG-TO247-3-46
Grade：-
Qualification：-

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IKQ75N120CH3XKSA1

Overview

The IKQ75N120CH3XKSA1 is a third-generation Highspeed IGBT from Infineon Technologies, copackaged with a soft, fast recovery full current rated anti-parallel Emitter Controlled diode. It features a collector-emitter voltage of 1200 V and a continuous collector current of 150 A at 25°C. The device operates within a junction temperature range of -40°C to +175°C. Key electrical parameters include a saturation voltage of 2.0 V at 25°C, a gate charge of 370 nC, and a short circuit withstand time of 10 µs at 175°C. It utilizes the PG-TO247-3-46 package.

Feature Summary

High efficiency in hard switching and resonant topologies
Easy paralleling capability due to positive temperature coefficient in VCEsat
Low EMI and low gate charge characteristics
Very soft, fast recovery full current anti-parallel diode

Applications

Industrial UPS
Charger
Energy Storage
Three-level Solar String Inverter
Welding

Procurement Notes

Verify the component authenticity by checking the marking code K75MCH3 on the device surface against official datasheet specifications. Confirm that the package type matches the PG-TO247-3-46 standard. Ensure that the ordering suffix XKSA1 corresponds to the specific tube packaging configuration required for your assembly process. Cross-reference the JEDEC qualification status for industrial applications before finalizing procurement.

Selection Notes

Select this component for designs requiring high-speed switching capabilities in industrial environments. The device is suitable for applications demanding robust short-circuit withstand times up to 10 µs. Consider the thermal resistance values when designing heat sinking solutions to maintain junction temperatures within the specified operating range. Evaluate the switching energy losses at your target operating frequency to ensure optimal system efficiency.

Part Context

This part belongs to the Highspeed switching series third generation IGBT family. It represents an evolution in silicon technology focused on reducing switching losses while maintaining high current handling capabilities. The product line is designed to meet the rigorous demands of modern power electronics, offering improved performance over previous generations in terms of speed and thermal management.

Replacement Considerations

Direct replacements should be sought within the same Infineon Highspeed3 technology family. Verify pin compatibility and thermal resistance parameters when substituting with other TO-247 packaged IGBTs. Ensure that any alternative device meets or exceeds the 1200 V voltage rating and 150 A current capacity requirements of the original design.