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The IKQ75N120CS6XKSA1 is a sixth-generation high-speed soft-switching IGBT utilizing TRENCHSTOP technology with Fieldstop architecture. It features an integrated anti-parallel diode and operates in a PG-TO247-3-46 package. Key electrical parameters include a collector-emitter voltage of 1200 V, a continuous collector current of 150 A at 25°C (75 A at 100°C), and a maximum junction temperature of 175°C. The device exhibits a typical saturation voltage of 1.85 V at 25°C and a gate charge of 530 nC.
Verify the specific ordering suffix against official Infineon documentation to confirm exact packaging and reel specifications. Confirm that the component meets RoHS compliance standards and lead-free plating requirements as stated in the datasheet. Ensure the procurement channel provides valid traceability for industrial-grade qualification tests per JEDEC standards.
Select this component for applications requiring high switching speeds and soft-recovery characteristics. Consider the thermal resistance values and power dissipation limits when designing heat sinks. Evaluate the short-circuit withstand time and safe operating area for robust fault protection in industrial environments.
This part belongs to the TRENCHSTOP IGBT6 series, designed for high-performance power conversion. It integrates advanced trench and fieldstop technologies to minimize switching losses. The product spectrum includes PSpice models for circuit simulation and validation prior to implementation.
No, the datasheet explicitly states that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council.
The maximum short-circuit withstand time is 3 µs at a junction temperature of 150°C, with a gate-emitter voltage of 15.0 V and collector voltage up to 500 V.