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Product Detailed Parameters
- Description：IGBT 750V 150A TO247-3-51
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：750 V
- Current - Collector (Ic) (Max)：150 A
- Current - Collector Pulsed (Icm)：360 A
- Vce(on) (Max) @ Vge, Ic：1.65V @ 15V, 120A
- Power - Max：577 W
- Switching Energy：6.4mJ (on), 3.4mJ (off)
- Input Type：Standard
- Gate Charge：481 nC
- Td (on/off) @ 25°C：57ns/285ns
- Test Condition：450V, 120A, 4.8Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：PG-TO247-3-51
- Grade：-
- Qualification：-
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Overview
The IKQB120N75CP2AKSA1 is a short-circuit rugged 750 V EDT2 IGBT co-packed with a soft and fast recovery diode in a PG-TO247-3-PLUS package. It features a collector-emitter voltage of 750 V, a continuous collector current of 120 A at Tc=120°C (150 A at Tc=25°C), and a saturation voltage of 1.4 V typical. The device supports a short-circuit withstand time of 3 µs and operates within a junction temperature range of -40°C to 175°C.
Feature Summary
- EDT2 technology optimized for hard switching topologies up to 10 kHz
- Package backside suitable for reflow soldering at 245°C three times
- Plating of pins enables electrical resistance welding
- Co-packed full current, soft and fast recovery diode
Applications
- CAV Powertrain Control Modules
- General purpose drives (GPD)
Procurement Notes
Verify the specific suffix AKSA1 against official documentation to confirm packaging details, as datasheets may reference standard variants without this suffix. Confirm JEDEC qualification status for industrial applications before integration. Ensure design margins respect the 80% maximum rating recommendation for optimal reliability.
Selection Notes
Select based on the 750 V blocking capability and 120 A continuous current requirement at elevated case temperatures. Consider the low saturation voltage of 1.4 V for conduction loss reduction. Evaluate the 3 µs short-circuit ruggedness against system fault protection timing requirements.
Part Context
This component belongs to Infineon's EDT2 discrete IGBT portfolio designed for industrial power conversion. It utilizes advanced trench gate technology to balance low conduction losses with manageable switching characteristics. The integrated diode simplifies circuit design by providing a complete switching solution in a single robust package.
Replacement Considerations
Direct substitutes are not explicitly listed in the provided source material. Verify compatibility with existing thermal management and gate drive circuits when considering alternative models from the same or different manufacturers.
