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Product Detailed Parameters
- Description：IGBT 750V 200A TO247-3-51
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：750 V
- Current - Collector (Ic) (Max)：200 A
- Current - Collector Pulsed (Icm)：480 A
- Vce(on) (Max) @ Vge, Ic：1.65V @ 15V, 160A
- Power - Max：750 W
- Switching Energy：9.7mJ (on), 5.2mJ (off)
- Input Type：Standard
- Gate Charge：610 nC
- Td (on/off) @ 25°C：72ns/324ns
- Test Condition：450V, 160A, 4.8Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：PG-TO247-3-51
- Grade：-
- Qualification：-
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Overview
The IKQB160N75CP2AKSA1 is a short-circuit rugged 750 V EDT2 IGBT co-packed with a soft and fast recovery diode in a PG-TO247-3-PLUS package. It features a collector-emitter saturation voltage of 1.4 V typ at 25°C, supporting a DC collector current of 160 A at Tc=125°C and 200 A at Tc=25°C. The device withstands short circuits for 3 µs and dissipates up to 750 W at Tc=25°C. Operating junction temperature ranges from -40°C to +175°C.
Feature Summary
- EDT2 technology optimized for hard switching topologies
- Package backside suitable for reflow soldering at 245°C
- Pins plated for electrical resistance welding
Applications
- CAV Powertrain Control Modules
- General purpose drives (GPD)
Procurement Notes
Verify the specific suffix AKSA1 against official documentation to confirm exact marking and packaging details. Confirm JEDEC industrial qualification status prior to integration. Ensure thermal management aligns with the specified Rth(j-c) values. Validate that the application does not exceed the 3 µs short circuit limit or maximum ratings.
Selection Notes
Select this component for industrial applications requiring robust short-circuit handling and low conduction losses. Verify compatibility with gate drive voltages and resistor values to achieve desired switching speeds. Consider thermal impedance characteristics for high-frequency operation up to 10 kHz.
Part Context
This part belongs to Infineon's EDT2 discrete IGBT portfolio designed for industrial power conversion. It utilizes advanced trench gate technology to minimize switching energy while maintaining high current density. The product is distinct from automotive-grade variants as it lacks AEC-Q101 qualification.
Replacement Considerations
No official substitutes are listed. When evaluating alternatives, compare VCEsat, Qrr, and tSC parameters. Ensure the replacement package supports the same mounting and thermal interface requirements.
