IKW03N120H

Description：IGBT 1200V 9.6A TO247-3-21
Series：-

SKU:8d710b6f16fc Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 1200V 9.6A TO247-3-21
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：9.6 A
Current - Collector Pulsed (Icm)：9.9 A
Vce(on) (Max) @ Vge, Ic：2.8V @ 15V, 3A
Power - Max：62.5 W
Switching Energy：140µJ (on), 150µJ (off)
Input Type：Standard
Gate Charge：22 nC
Td (on/off) @ 25°C：9.2ns/281ns
Test Condition：800V, 3A, 82Ohm, 15V
Reverse Recovery Time (trr)：42 ns
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：PG-TO247-3-21
Grade：-
Qualification：-

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IKW03N120H

Overview

The IKW03N120H is a single silicon Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies, housed in a PG-TO247-3-21 through-hole package. It belongs to the Trenchstop IGBT4 series and features an integrated anti-parallel diode. The device supports a maximum collector-emitter voltage of 1200 V and a continuous collector current of 9.6 A at 25°C. Key electrical parameters include a saturation voltage of 2.8 V at 3 A, gate-emitter leakage of 600 nA, and power dissipation of 62.5 W. It operates within a temperature range of -40°C to +150°C.

Feature Summary

Integrates an anti-parallel diode for simplified circuit design
Utilizes Trenchstop IGBT4 technology for optimized switching performance
Designed for robust operation in high-voltage applications

Applications

High-frequency switching power supplies
Motor drive inverters
Uninterruptible power systems (UPS)

Procurement Notes

Verify component authenticity by cross-referencing the manufacturer's part number with official datasheets. Ensure the ordering suffix matches the specific variant required, as suffixes may indicate differences in packaging or testing criteria. Confirm that the PG-TO247-3-21 package type aligns with the thermal and mechanical constraints of the target PCB layout before finalizing procurement.

Selection Notes

Select this component when a 1200 V rating and low current capacity around 9.6 A are required. The integrated anti-parallel diode eliminates the need for external freewheeling components, reducing bill-of-materials complexity. Consider the 62.5 W power dissipation limit and ensure adequate heatsinking to maintain junction temperatures within the specified operational range during continuous duty cycles.

Part Context

This IGBT is part of Infineon's Trenchstop IGBT4 product family, which focuses on improving efficiency in medium-power applications. The TO-247-3 package provides a balance between thermal performance and mounting flexibility. It serves as a discrete solution for circuits requiring reliable switching at voltages up to 1200 V with moderate current handling capabilities.