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The IKW08N120CS7XKSA1 is a short circuit rugged 1200 V TRENCHSTOP™ IGBT 7 technology device co-packed with a soft and fast recovery Emitter Controlled 7 diode. It features an 8 A DC collector current at 25 °C, a maximum collector-emitter voltage of 1200 V, and a saturation voltage of 2.0 V at Tvj=175 °C. The component provides 8 µsec short circuit withstand time and operates within a junction temperature range of -40 to 175 °C.
Verify the exact ordering suffix against official Infineon documentation to confirm package type and specific variant details. Ensure compliance with JEDEC47/20/22 industrial application validation standards before integration into final designs.
Select this component for applications requiring robust short circuit protection up to 8 µsec. The integrated soft recovery diode minimizes reverse recovery losses, making it suitable for high-frequency hard switching environments where thermal management is critical.
This part belongs to the TRENCHSTOP™ IGBT 7 family from Infineon Technologies. It utilizes advanced trench gate technology combined with field-stop design to achieve low conduction and switching losses while maintaining high reliability in demanding power conversion scenarios.
Consult official Infineon cross-reference guides for verified substitutes. Ensure replacement parts match the PG-TO247-3 package dimensions and maintain equivalent electrical characteristics for direct board-level interchangeability.