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The IKW30N65EL5XKSA1 is a low VCE(sat) IGBT in TRENCHSTOPTM 5 technology, copacked with a RAPID 1 fast and soft antiparallel diode. It features a 650V breakdown voltage and operates up to a maximum junction temperature of 175°C. The device offers very low collector-emitter saturation voltage and best-in-class tradeoff between conduction and switching losses. Key electrical parameters include a DC collector current of 85A at 25°C case temperature, a typical VCEsat of 1.05V at 30A, and a gate charge of 168nC. Power dissipation reaches 227W at 25°C case temperature.
Verify the specific ordering suffix XKSA1 against official Infineon documentation to confirm package type and compliance details. Ensure that the application environment does not exceed the absolute maximum ratings defined in the datasheet for optimal lifetime and reliability. Confirm RoHS compliance status through the manufacturer's official channels before finalizing procurement specifications.
Select this component for applications requiring high efficiency and robust thermal performance up to 175°C. Consider the integrated antiparallel diode characteristics when designing circuits involving inductive loads or freewheeling currents. Evaluate the thermal resistance values provided in the datasheet to determine appropriate heatsinking requirements for the intended operating conditions.
This part belongs to the TRENCHSTOPTM 5 series, representing the fifth generation of low VCE(sat) IGBT technology from Infineon Technologies. It is designed for industrial power control applications where minimizing switching and conduction losses is critical. The PG-TO247-3 package provides a reliable solution for through-hole mounting in various power electronic systems.
Consult official Infineon documentation for confirmed substitute part numbers within the TRENCHSTOPTM 5 family or other compatible series. Verify pinout compatibility and electrical parameter equivalence before considering any alternative components.