IKW30N65H5XKSA1

$4.12

Description：IGBT TRENCH 650V 55A TO247-3
Series：TrenchStop™

SKU:1b5a1df49989 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH 650V 55A TO247-3
Series：TrenchStop™
Mfr：Infineon Technologies
Package：Tube
IGBT Type：Trench
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：55 A
Current - Collector Pulsed (Icm)：90 A
Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 30A
Power - Max：188 W
Switching Energy：280µJ (on), 100µJ (off)
Input Type：Standard
Gate Charge：70 nC
Td (on/off) @ 25°C：20ns/190ns
Test Condition：400V, 15A, 23Ohm, 15V
Reverse Recovery Time (trr)：70 ns
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：PG-TO247-3
Grade：-
Qualification：-

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IKW30N65H5XKSA1

Overview

The IKW30N65H5 is a High-speed Fifth Generation IGBT in TRENCHSTOPTM 5 technology, copacked with a RAPID1 fast and soft antiparallel diode. It features a collector-emitter voltage (VCE) of 650 V and a DC collector current (IC) of 55 A at TC=25°C. The maximum power dissipation is 188 W at TC=25°C. The collector-emitter saturation voltage (VCEsat) is 1.65 V at Tvj=25°C and IC=30A. The gate charge (QG) is typically 70 nC. The component operates within a junction temperature range of -40°C to +175°C and utilizes a PG-TO247-3 package.

Feature Summary

High-speed H5 technology optimized for efficiency in hard switching and resonant topologies
Copackaged with a RAPID1 fast and soft antiparallel diode
Qualified according to JEDEC standards for target applications

Applications

Solar converters
Uninterruptible power supplies
Welding converters
Mid to high range switching frequency converters

Procurement Notes

Verify the specific datasheet revision and ordering suffixes directly with Infineon or authorized distributors before procurement. Confirm that the PG-TO247-3 package dimensions match your PCB footprint requirements. Ensure thermal management solutions are designed to handle the specified power dissipation limits at the intended operating case temperatures.

Selection Notes

Select this component for applications requiring high-speed switching capabilities and low gate charge. The integrated RAPID1 diode simplifies circuit design by providing a soft-recovery antiparallel path. Consider the thermal resistance values when designing heatsinking systems to maintain the junction temperature within the recommended operational limits.

Part Context

This device belongs to the High-speed Switching Series Fifth Generation product line from Infineon Technologies. It represents an evolution in TRENCHSTOPTM 5 technology, offering improved performance metrics compared to previous generations while maintaining compatibility with standard mounting configurations.

Replacement Considerations

The datasheet identifies this component as a plug-and-play replacement for previous generation IGBTs. Verify pinout compatibility and thermal characteristics when substituting older models in existing designs.