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The IKW40N120CH7XKSA1 is a high-speed 1200 V TRENCHSTOP™ IGBT 7 Technology device co-packed with a full-rated current, soft-commutating, ultra-fast recovery diode. It features a maximum junction temperature of 175°C and a low saturation voltage of 1.7 V at 25°C. The component is optimized for high efficiency in high-speed hard switching topologies and offers easy paralleling capability due to the positive temperature coefficient in VCEsat.
Verify that the specific ordering suffix matches the required package variant and lead time requirements. Confirm RoHS compliance status and Pb-free lead plating specifications against project standards. Ensure the procurement channel provides valid datasheet documentation for technical validation prior to integration.
Select this component for applications requiring high-speed hard switching performance and low conduction losses. Consider the positive temperature coefficient for parallel operation needs. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance values under varying operating temperatures.
This part belongs to the Infineon TRENCHSTOP™ IGBT 7 family, designed for industrial power electronics. It utilizes advanced trench gate technology to achieve superior switching characteristics compared to previous generations. The device is specifically engineered to minimize switching energy losses while maintaining robust short-circuit withstand capability.
Public confirmed substitute part numbers are not available in the verified source material.