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The IKW40N120H3FKSA1 is a High Speed DuoPack IGBT in Trench and Fieldstop technology with an integrated soft, fast recovery antiparallel diode. It features a collector-emitter voltage of 1200 V and a continuous collector current of 80 A at 25°C case temperature. The device operates up to a maximum junction temperature of 175°C. Key electrical parameters include a saturation voltage of 2.05 V (typical), gate charge of 185 nC, and short-circuit withstand time of 10 µs. Switching energy losses are 3.2 mJ for turn-on and 1.2 mJ for turn-off.
Verify the specific ordering suffix FKSA1 against official Infineon documentation to confirm package type and compliance details. Ensure that the application environment does not exceed the absolute maximum ratings defined in the datasheet, particularly regarding thermal resistance and transient voltages. Confirm RoHS compliance status through the manufacturer's latest product quality report.
Select this component for designs requiring high switching frequencies and low electromagnetic interference. The integrated antiparallel diode simplifies circuit topology by eliminating external freewheeling requirements. Consider the thermal management capabilities provided by the TO-247-3 package when designing heatsinking solutions for continuous operation at elevated temperatures.
This part belongs to the IKW40N120H3 series from Infineon Technologies. It is a single N-channel IGBT module packaged in PG-TO247-3. The marking on the device is K40H1203. It is designed as a high-performance solution for power conversion applications where efficiency and switching speed are critical factors.
IKW40N120H3
The maximum short-circuit withstand time is 10 µs.
Yes, it includes a soft, fast recovery antiparallel diode.
The typical collector-emitter saturation voltage is 2.05 V.