IKW40N120T2FKSA1

Overview

The IKW40N120T2FKSA1 is a single IGBT with an integrated anti-parallel diode from Infineon's TRENCHSTOP™ 2nd Generation series. It features a PG-TO-247-3 package and supports a collector-emitter voltage of 1200 V. The maximum continuous DC collector current is 40 A at a case temperature of 25°C, with a pulsed current capability of 160 A. The typical collector-emitter saturation voltage is 1.75 V at 25°C. Total switching energy is 5.25 mJ at 25°C and 8.3 mJ at 175°C under inductive load conditions. The device has a short circuit withstand time of 10 µs and operates within a junction temperature range of -40°C to +175°C.

Feature Summary

• Integrates a soft, fast recovery Emitter Controlled Diode for low reverse recovery losses.
• Features positive temperature coefficient in VCE(sat) to facilitate easy paralleling.
• Provides high ruggedness and tight parameter distribution for stable operation.
• Includes 10 µs short circuit withstand capability for enhanced system protection.

Applications

• Frequency converters
• Uninterrupted Power Supply (UPS)
• High-frequency power conversion circuits

Procurement Notes

Verify the specific suffix FKSA1 against official documentation to confirm packaging details and marking codes. Ensure the component meets RoHS compliance standards and JEDEC1 qualification requirements for the intended application environment. Cross-reference the datasheet revision to confirm thermal resistance values and electrical characteristics match the production batch specifications.

Selection Notes

Select this component for applications requiring robust performance in hard-switching environments up to 175°C. The 1200V rating provides adequate headroom for standard industrial bus voltages. Consider the 1.75V saturation voltage for conduction loss optimization. Evaluate the gate charge and switching energy parameters against the available gate drive capabilities to ensure efficient turn-on and turn-off transitions without excessive electromagnetic interference.

Part Context

This part belongs to the TRENCHSTOP™ 2nd Generation series, designed as a low-loss solution for 1200V silicon applications. It utilizes field-stop technology to optimize the trade-off between conduction and switching losses. The device is manufactured using lead-free plating processes and is qualified for demanding industrial environments, offering a reliable alternative to older generation discrete IGBTs.

Replacement Considerations

Public confirmed substitute part numbers are not provided in the source material.