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The IKW40N65ET7XKSA1 is a single IGBT with an anti-parallel diode in a PG-TO247-3 package. It features TRENCHSTOP™ 7 technology, offering a collector-emitter voltage of 650 V and a continuous collector current of 76 A at 25°C. The device exhibits low saturation voltage (1.35 V typ) and short tail current for reduced switching losses. Operating junction temperature ranges from -40°C to +175°C.
Verify the specific ordering suffix against official Infineon documentation to confirm exact packaging and marking details. Confirm RoHS compliance status and Pb-free lead plating specifications directly with the manufacturer or authorized distributors before procurement.
Select this component for high-efficiency industrial power conversion requiring robust short-circuit withstand capability. Ensure thermal management design accommodates the specified junction-to-case thermal resistance values under maximum operating conditions.
This part belongs to the TRENCHSTOP™ IGBT7 family, utilizing Trench and Fieldstop technology. It is designed as a low-loss discrete semiconductor device for demanding industrial environments where reliability and efficiency are critical.
Consult official Infineon cross-reference documents for verified substitutes. Do not assume compatibility with other IGBT families without verifying pinout, electrical ratings, and thermal characteristics.