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The IKW40N65F5AXKSA1 is a high-speed IGBT in TRENCHSTOP™ 5 technology, copacked with a RAPID™ 1 fast and soft antiparallel diode. It features a 650V breakdown voltage and a maximum junction temperature of 175°C. The device is qualified according to AEC-Q101 standards. Key electrical parameters include a collector-emitter saturation voltage of 1.6V at 25°C (40A), a gate charge of 95nC, and switching energies of 0.35mJ (turn-on) and 0.10mJ (turn-off). It utilizes a PG-TO247-3 package.
Verify the component status as End-of-Life (EOL) or obsolete through official Infineon channels before procurement planning. Confirm availability of direct substitutes such as AIKW40N65DF5XKSA1 if production continuity is required. Ensure that any replacement components meet the specific thermal and electrical requirements of the original design.
Select this component for applications requiring high-speed switching and low losses in hard-switching or resonant topologies. The integrated RAPID™ 1 diode simplifies circuit design by reducing external component count. Consider the 175°C maximum junction temperature for high-temperature operation environments and verify compatibility with standard TO-247 mounting hardware.
This part belongs to the TRENCHSTOP™ 5 FAST series from Infineon Technologies. It represents a fifth-generation IGBT technology designed to bridge the gap between MOSFETs and traditional IGBTs. The 'AXKSA1' suffix indicates specific packaging and ordering details within the broader IKW40N65F5 product family.
AIKW40N65DF5XKSA1
The maximum operating junction temperature (Tvj) is 175°C.
Yes, the device is qualified according to AEC-Q101 standards.
It is copacked with a RAPID™ 1 fast and soft antiparallel diode.