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The IKW40N65H5AXKSA1 is a high-speed IGBT in TRENCHSTOP™ 5 technology, copacked with a RAPID 1 fast and soft antiparallel diode. It features a 650 V collector-emitter breakdown voltage (VCEO) and a continuous collector current of 74 A at 25°C case temperature. The device has a maximum junction temperature of 175°C and operates within a storage temperature range of -55°C to +150°C. It utilizes a PG-TO247-3 package with Pin 1 as the gate, Pins 2 and backside as the collector, and Pin 3 as the emitter.
Verify the exact ordering suffix against Infineon's official documentation to confirm specific tape-and-reel or tube packaging variants. Confirm RoHS compliance status directly with the manufacturer. Ensure that any requested revisions match the datasheet revision history to avoid obsolete component procurement.
Select this component for applications requiring high switching speeds and low conduction losses. The integrated diode simplifies circuit design by eliminating the need for external anti-parallel diodes. Consider the thermal resistance characteristics when designing heat sinks for high-power density environments.
This part belongs to the High-speed 5 FAST IGBT series utilizing TRENCHSTOP™ 5 technology. It represents the fifth generation of Infineon's high-speed switching devices, offering improved performance over earlier generations while maintaining compatibility with existing designs.
Officially documented as a plug-and-play replacement for previous generation IGBTs. Verify pinout and thermal characteristics against legacy components before substitution.
The maximum operating junction temperature (Tvj) is 175°C.
It is an IGBT copacked with a RAPID 1 fast and soft antiparallel diode.
The component is qualified according to the AEC-Q101 standard.