IKW40N65H5AXKSA1

IKW40N65H5AXKSA1

  • Description:IGBT TRENCH 650V 74A TO247-3
  • Series:TrenchStop™

SKU:4bf6018ed0a7 Category: Brand:

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Product Detailed Parameters

  • Description:IGBT TRENCH 650V 74A TO247-3
  • Series:TrenchStop™
  • Mfr:Infineon Technologies
  • Package:Tube
  • IGBT Type:Trench
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):74 A
  • Current - Collector Pulsed (Icm):120 A
  • Vce(on) (Max) @ Vge, Ic:2.1V @ 15V, 40A
  • Power - Max:250 W
  • Switching Energy:380µJ (on), 120µJ (off)
  • Input Type:Standard
  • Gate Charge:92 nC
  • Td (on/off) @ 25°C:20ns/153ns
  • Test Condition:400V, 20A, 15Ohm, 15V
  • Reverse Recovery Time (trr):75 ns
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:PG-TO247-3
  • Grade:Automotive
  • Qualification:AEC-Q101

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IKW40N65H5AXKSA1

Overview

The IKW40N65H5AXKSA1 is a high-speed IGBT in TRENCHSTOP™ 5 technology, copacked with a RAPID 1 fast and soft antiparallel diode. It features a 650 V collector-emitter breakdown voltage (VCEO) and a continuous collector current of 74 A at 25°C case temperature. The device has a maximum junction temperature of 175°C and operates within a storage temperature range of -55°C to +150°C. It utilizes a PG-TO247-3 package with Pin 1 as the gate, Pins 2 and backside as the collector, and Pin 3 as the emitter.

Feature Summary

  • High-speed H5 technology optimized for best-in-class efficiency in hard switching and resonant topologies.
  • Integrated RAPID 1 fast and soft antiparallel diode providing low reverse recovery charge and peak current.
  • Qualified according to AEC-Q101 standards for automotive and industrial reliability.
  • Designed as a plug-and-play replacement for previous generation IGBTs.

Applications

  • Battery chargers
  • DC/DC converters

Procurement Notes

Verify the exact ordering suffix against Infineon's official documentation to confirm specific tape-and-reel or tube packaging variants. Confirm RoHS compliance status directly with the manufacturer. Ensure that any requested revisions match the datasheet revision history to avoid obsolete component procurement.

Selection Notes

Select this component for applications requiring high switching speeds and low conduction losses. The integrated diode simplifies circuit design by eliminating the need for external anti-parallel diodes. Consider the thermal resistance characteristics when designing heat sinks for high-power density environments.

Part Context

This part belongs to the High-speed 5 FAST IGBT series utilizing TRENCHSTOP™ 5 technology. It represents the fifth generation of Infineon's high-speed switching devices, offering improved performance over earlier generations while maintaining compatibility with existing designs.

Replacement Considerations

Officially documented as a plug-and-play replacement for previous generation IGBTs. Verify pinout and thermal characteristics against legacy components before substitution.

FAQ

What is the maximum junction temperature for the IKW40N65H5A?

The maximum operating junction temperature (Tvj) is 175°C.

How is the device configured internally?

It is an IGBT copacked with a RAPID 1 fast and soft antiparallel diode.

What qualification standard does this component meet?

The component is qualified according to the AEC-Q101 standard.

IKW40N65H5AXKSA1IKW40N65H5AXKSA1

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