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The IKW50N65ET7XKSA1 is a TRENCHSTOP™ IGBT 7 with an integrated antiparallel diode in a PG-TO247-3 package. It features a collector-emitter voltage of 650 V and a continuous collector current of 80 A at 25°C. The device exhibits low saturation voltage (1.35 V typ) and short tail current for reduced switching losses. Key electrical parameters include a gate charge of 290 nC, turn-off energy of 0.85 mJ, and reverse recovery charge of 1.05 µC. It supports a maximum junction temperature of 175°C and offers short-circuit withstand capability.
Verify the specific ordering suffix against official Infineon documentation to confirm exact packaging and marking details. Confirm RoHS compliance status and Pb-free lead plating requirements for your assembly process. Ensure the component meets JEDEC qualification standards for industrial applications before integration into final designs.
Select this component for high-efficiency switching applications requiring low conduction and switching losses. The integrated antiparallel diode simplifies circuit topology compared to discrete solutions. Consider the thermal resistance values and case temperature limits when designing heat dissipation systems for sustained operation.
This part belongs to the Infineon TRENCHSTOP™ IGBT 7 family, designed for low-loss power switching. It utilizes advanced trench and fieldstop technologies to optimize performance. The product spectrum includes various current ratings and packages, with PSpice models available for simulation purposes.
Public confirmed substitute part numbers are not provided in the source material.