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The IKW75N120CH7XKSA1 is a high-speed 1200 V TRENCHSTOP™ IGBT 7 Technology device co-packed with a full rated current, soft-commutating, ultra-fast recovery emitter controlled diode. It features a collector-emitter saturation voltage of 1.7 V at 25°C and operates up to a maximum junction temperature of 175°C. The component utilizes a PG-TO247-3 package.
Verify the specific ordering suffix against official Infineon documentation to confirm exact packaging and marking details. Ensure compliance with JEDEC47/20/22 industrial application standards during integration. Confirm RoHS compliance status through manufacturer certificates prior to procurement.
Select this component for applications requiring high efficiency in high-speed hard switching topologies. Consider the positive temperature coefficient for parallel operation requirements. Evaluate thermal management needs based on the specified junction-to-case thermal resistance values provided in the datasheet.
This part belongs to the TRENCHSTOP™ IGBT 7 family from Infineon Technologies. It represents an evolution in power semiconductor technology designed for improved switching performance and reduced losses compared to previous generations.
Consult official Infineon cross-reference guides for verified substitutes. Do not assume compatibility with other IGBT families without verifying pinout, electrical ratings, and thermal characteristics.