SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IKW75N60H3FKSA1 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from Infineon’s HighSpeed 3 series, utilizing TRENCHSTOP technology. It features a TO-247-3 through-hole package with a maximum collector-emitter voltage of 600 V and a continuous collector current of 80 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.85 V and supports a power dissipation of 428 W. Operating temperatures range from -40°C to +175°C, with a gate-emitter voltage limit of ±20 V.
Verify the complete part number including suffix FKSA1 against official Infineon documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status via the manufacturer's latest datasheet or material declaration before procurement. Cross-reference ordering numbers with authorized distributors to avoid counterfeit components.
Select this component for applications requiring high current handling up to 80 A with moderate switching speeds. The 600 V rating suits medium-voltage AC/DC conversion systems. Ensure thermal management designs accommodate the 428 W dissipation rating within the specified temperature range.
This IGBT belongs to the HighSpeed 3 family, designed to balance conduction and switching losses. It serves as a discrete power switch alternative to modules in mid-power applications. The TO-247-3 package facilitates easy mounting on heatsinks for efficient thermal transfer in standalone converter topologies.
IKW75N60H3