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The IKW75N60TFKSA1 is a single N-channel IGBT from Infineon's TRENCHSTOP™ series, utilizing Fieldstop technology. It features an integrated anti-parallel Emitter Controlled HE diode in a PG-TO247-3 package. Key electrical ratings include a collector-emitter voltage of 600 V and a continuous collector current of 80 A at 25°C (75 A at 100°C). The device exhibits a typical saturation voltage of 1.5 V at 25°C and supports a maximum junction temperature of 175°C with a short circuit withstand time of 5 µs.
Verify the specific suffix FKSA1 against official documentation to confirm lead-free plating and RoHS compliance status. Ensure the ordering code matches the exact datasheet revision required for your design. Confirm that the PG-TO247-3 package dimensions align with your PCB footprint and thermal management strategy before finalizing procurement.
Select this component for applications requiring high efficiency and robust short-circuit protection up to 5 µs. The positive temperature coefficient aids in current sharing when paralleling devices. Consider the thermal resistance values and power dissipation limits relative to your case temperature constraints. Evaluate the gate charge requirements against your driver capabilities for optimal switching performance.
This part belongs to the TRENCHSTOP™ Series, which combines trench gate and fieldstop technologies. This architecture enables low conduction losses while maintaining fast switching characteristics. The series is designed for general purpose industrial applications where reliability and efficiency are critical parameters.
IKW75N60T
The device has a short circuit withstand time of 5 µs under conditions of VGE = 15V, VCC ≤ 400V, and Tj ≤ 150°C.
Yes, it includes an integrated anti-parallel Emitter Controlled HE diode with soft, fast recovery characteristics.
The maximum operating junction temperature is 175°C.