IKW75N60TFKSA1

IKW75N60TFKSA1

$7.81
  • Description:IGBT TRENCH FS 600V 80A TO247-3
  • Series:TrenchStop®

SKU:8cd67111ead5 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT TRENCH FS 600V 80A TO247-3
  • Series:TrenchStop®
  • Mfr:Infineon Technologies
  • Package:Tube
  • IGBT Type:Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):80 A
  • Current - Collector Pulsed (Icm):225 A
  • Vce(on) (Max) @ Vge, Ic:2V @ 15V, 75A
  • Power - Max:428 W
  • Switching Energy:4.5mJ
  • Input Type:Standard
  • Gate Charge:470 nC
  • Td (on/off) @ 25°C:33ns/330ns
  • Test Condition:400V, 75A, 5Ohm, 15V
  • Reverse Recovery Time (trr):121 ns
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:PG-TO247-3-1
  • Grade:-
  • Qualification:-

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IKW75N60TFKSA1

Overview

The IKW75N60TFKSA1 is a single N-channel IGBT from Infineon's TRENCHSTOP™ series, utilizing Fieldstop technology. It features an integrated anti-parallel Emitter Controlled HE diode in a PG-TO247-3 package. Key electrical ratings include a collector-emitter voltage of 600 V and a continuous collector current of 80 A at 25°C (75 A at 100°C). The device exhibits a typical saturation voltage of 1.5 V at 25°C and supports a maximum junction temperature of 175°C with a short circuit withstand time of 5 µs.

Feature Summary

  • Integrates a soft, fast recovery anti-parallel Emitter Controlled HE diode for low switching losses.
  • Features very tight parameter distribution and high ruggedness with temperature stable behavior.
  • Provides positive temperature coefficient in VCE(sat) to facilitate parallel operation.
  • Designed for low electromagnetic interference (EMI) through very high switching speed.

Applications

  • Frequency Converters
  • Uninterrupted Power Supply

Procurement Notes

Verify the specific suffix FKSA1 against official documentation to confirm lead-free plating and RoHS compliance status. Ensure the ordering code matches the exact datasheet revision required for your design. Confirm that the PG-TO247-3 package dimensions align with your PCB footprint and thermal management strategy before finalizing procurement.

Selection Notes

Select this component for applications requiring high efficiency and robust short-circuit protection up to 5 µs. The positive temperature coefficient aids in current sharing when paralleling devices. Consider the thermal resistance values and power dissipation limits relative to your case temperature constraints. Evaluate the gate charge requirements against your driver capabilities for optimal switching performance.

Part Context

This part belongs to the TRENCHSTOP™ Series, which combines trench gate and fieldstop technologies. This architecture enables low conduction losses while maintaining fast switching characteristics. The series is designed for general purpose industrial applications where reliability and efficiency are critical parameters.

Replacement Considerations

IKW75N60T

FAQ

What is the short circuit withstand time for this IGBT?

The device has a short circuit withstand time of 5 µs under conditions of VGE = 15V, VCC ≤ 400V, and Tj ≤ 150°C.

Does the IKW75N60TFKSA1 include an integrated diode?

Yes, it includes an integrated anti-parallel Emitter Controlled HE diode with soft, fast recovery characteristics.

What is the maximum operating junction temperature?

The maximum operating junction temperature is 175°C.

IKW75N60TFKSA1IKW75N60TFKSA1
$7.81
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