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Product Detailed Parameters
- Description：IGBT 650V 80A TO247-3
- Series：TrenchStop™ 5
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：300 A
- Vce(on) (Max) @ Vge, Ic：1.35V @ 15V, 75A
- Power - Max：536 W
- Switching Energy：1.61mJ (on), 3.2mJ (off)
- Input Type：Standard
- Gate Charge：436 nC
- Td (on/off) @ 25°C：40ns/275ns
- Test Condition：400V, 75A, 4Ohm, 15V
- Reverse Recovery Time (trr)：114 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：PG-TO247-3
- Grade：-
- Qualification：-
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Overview
The IKW75N65EL5XKSA1 is a single IGBT in TRENCHSTOPTM 5 technology, copacked with a RAPID 1 fast and soft antiparallel diode. It features a collector-emitter voltage of 650 V and a continuous collector current of 80 A at 25°C. The device offers a low collector-emitter saturation voltage of 1.1 V at 25°C and a maximum junction temperature of 175°C. Power dissipation reaches 536 W at a case temperature of 25°C. The component utilizes PG-TO247-3 through-hole packaging.
Feature Summary
- Low VCE(sat) L5 technology providing very low collector-emitter saturation voltage
- Optimized tradeoff between conduction and switching losses
- Copackaged with RAPID 1 fast and soft antiparallel diode
- Qualified according to JEDEC standards for target applications
Applications
- Uninterruptible power supplies
- Solar photovoltaic inverters
- Welding machines
Procurement Notes
Verify the specific ordering suffix XKSA1 against official Infineon documentation to confirm package type and compliance details. Ensure the procurement channel provides valid datasheets matching version 2.2. Confirm RoHS compliance and lead-free plating status directly from the manufacturer's certificate of conformity before finalizing orders.
Selection Notes
Select this component for industrial power control applications requiring high efficiency and robust thermal performance. The integrated RAPID 1 diode simplifies circuit design by reducing parasitic inductance. Consider the 175°C maximum junction temperature for high-temperature operation environments. Evaluate gate resistance requirements to optimize switching speed versus loss tradeoffs based on specific application constraints.
Part Context
This part belongs to the TRENCHSTOPTM 5 Low-VCE(sat) series, representing the fifth generation of Infineon's IGBT technology. It is designed for industrial power control applications where low conduction losses are critical. The product spectrum includes various current ratings within the same family, offering flexibility for different power levels while maintaining consistent packaging and interface characteristics.
Replacement Considerations
Consult official Infineon replacement guides for direct substitutes. Verify electrical parameters such as VCEsat, IC, and package dimensions match the original requirements. Ensure any alternative component maintains compatibility with existing gate drive circuits and thermal management solutions.
