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The IKWH70N67PR7XKSA1 is a TRENCHSTOP IGBT 7 PR7 Reverse Conducting IGBT designed for boost PFC stages. It features a collector-emitter voltage of 670 V and a continuous collector current of 140 A at 25°C. The device utilizes a PG-TO247-3-U04 package with high creepage distance exceeding 4.8 mm. Typical saturation voltage is 1.4 V at 25°C, rising to 1.7 V at 175°C. Switching energy losses are 1.58 mJ (turn-on) and 1.14 mJ (turn-off) at 25°C. Operating junction temperature ranges from -40°C to 175°C.
Verify the specific ordering suffix XKSA1 against official Infineon documentation to confirm tape-and-reel packaging configuration. Ensure the component meets JEDEC industrial qualification standards required for the target application environment. Cross-reference datasheet revision 1.00 for accurate electrical parameters before finalizing design specifications.
Select this component for high-power boost PFC topologies requiring improved EMI performance. The integrated reverse-conducting diode eliminates external components, reducing board space. Verify thermal management capabilities align with the specified junction-to-case thermal resistance values under maximum operating conditions.
This device belongs to the TRENCHSTOP IGBT 7 series, utilizing micro-pattern trench technology for superior controllability. It serves as an advanced solution for variable speed drives and power conversion stages. The PR7 variant specifically addresses the needs of high-frequency operation in residential and commercial climate control systems.
IKWH70N67PR7
The pin-to-pin clearance distance exceeds 3.4 mm.
No, the product is not qualified according to AEC Q100 or AEC Q101 documents.
The typical gate charge is 181 nC at VCC = 520 V, IC = 70 A, and VGE = 15 V.