IKWH75N65EH7XKSA1

$6.72

Description：IGBT TRENCH FS 650V 80A TO247-3
Series：TRENCHSTOP™

SKU:e2bcaf7bc81d Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 650V 80A TO247-3
Series：TRENCHSTOP™
Mfr：Infineon Technologies
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：650 V
Current - Collector (Ic) (Max)：80 A
Current - Collector Pulsed (Icm)：300 A
Vce(on) (Max) @ Vge, Ic：1.65V @ 15V, 75A
Power - Max：341 W
Switching Energy：2.42mJ (on), 1.4mJ (off)
Input Type：Standard
Gate Charge：150 nC
Td (on/off) @ 25°C：25ns/45ns
Test Condition：400V, 75A, 10Ohm, 15V
Reverse Recovery Time (trr)：89 ns
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：PG-TO247-3-32
Grade：-
Qualification：-

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IKWH75N65EH7XKSA1

Overview

The IKWH75N65EH7XKSA1 is a single IGBT with an anti-parallel diode in a TO-247-3 HCC package. It utilizes TRENCHSTOP™ IGBT7 technology and features a soft, fast recovery Emitter Controlled 7 diode. Maximum collector-emitter voltage is 650 V. Continuous collector current reaches 80 A at 25 °C and 100 °C case temperatures. Pulsed collector current is 300 A. Collector-emitter saturation voltage is typically 1.4 V at 25 °C and 1.6 V at 175 °C. Gate charge is 150 nC. Operating junction temperature ranges from -40 °C to 175 °C.

Feature Summary

High speed switching combined with low collector-emitter saturation voltage for optimized efficiency.
Soft, fast recovery antiparallel diode providing smooth switching behavior.
Humidity robustness ensuring reliability under varying environmental conditions.

Applications

Industrial UPS
EV-Charging
String inverter
Welding

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm exact packaging and reel specifications. Confirm that the component meets JEDEC47/20/22 industrial qualification standards required for your target application environment. Ensure thermal management designs account for the specified junction-to-case thermal resistance values provided in the datasheet.

Selection Notes

Select this component for hard switching applications requiring high efficiency and low conduction losses. The integrated soft recovery diode makes it suitable for topologies where reverse recovery characteristics are critical. Verify that the gate drive circuitry can handle the specified gate charge and threshold voltage requirements for reliable turn-on and turn-off transitions.

Part Context

This device belongs to the TRENCHSTOP™ IGBT7 family, representing advanced silicon technology for power conversion. It is designed as a discrete solution for medium-power applications. The HCC package variant offers enhanced clearance and creepage distances compared to standard packages, supporting higher voltage isolation requirements in compact designs.