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The IKY100N120CH7XKSA1 is a high-speed IGBT with an integrated emitter-controlled diode, utilizing TRENCHSTOP™ IGBT 7 technology. It features a collector-emitter voltage of 1200 V and a continuous collector current of 100 A at 25°C (limited by junction temperature). The device operates within a junction temperature range of -40°C to 175°C. Key electrical parameters include a saturation voltage of 1.7 V at 25°C and a gate charge of 714 nC. The diode exhibits a forward voltage of 2.5 V and a reverse recovery charge of 3.09 µC.
Verify the specific ordering suffix against official Infineon documentation to confirm package type and compliance status. Confirm that the component meets industrial application requirements as per JEDEC standards. Ensure design margins do not exceed 80% of maximum ratings for optimal reliability. Check for RoHS compliance and Pb-free lead plating specifications before procurement.
Select this component for applications requiring high-speed hard switching capabilities. The positive temperature coefficient facilitates easy paralleling for higher current demands. Consider the thermal resistance values when designing heat dissipation systems. Evaluate the low Qrr characteristics for minimizing switching losses in high-frequency operations.
This part belongs to the TRENCHSTOP™ IGBT 7 family from Infineon Technologies. It is housed in a PG-TO247-4-PLUS package. The product is qualified for industrial applications according to relevant JEDEC tests. It is distinct from automotive-qualified parts as it does not meet AEC-Q100 or AEC-Q101 standards.
Public confirmed substitute part numbers are not available in the provided datasheet.
No, this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council.
The maximum operating junction temperature is 175°C.
Yes, the device supports easy paralleling capability due to the positive temperature coefficient in VCEsat.