IKY40N120CH3XKSA1

$8.13

Description：IGBT 1200V 80A TO247-4
Series：-

SKU:11c832d62fec Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 1200V 80A TO247-4
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：80 A
Current - Collector Pulsed (Icm)：160 A
Vce(on) (Max) @ Vge, Ic：2.35V @ 15V, 40A
Power - Max：500 W
Switching Energy：2.18mJ (on), 1.3mJ (off)
Input Type：Standard
Gate Charge：190 nC
Td (on/off) @ 25°C：30ns/280ns
Test Condition：600V, 40A, 12Ohm, 15V
Reverse Recovery Time (trr)：350 ns
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-4
Supplier Device Package：PG-TO247-4
Grade：-
Qualification：-

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IKY40N120CH3XKSA1

Overview

The IKY40N120CH3XKSA1 is a low switching loss IGBT in Highspeed3 technology, co-packed with a soft, fast recovery full current rated antiparallel emitter controlled diode. It features a collector-emitter voltage of 1200 V and a DC collector current of 80 A at Tc = 25 °C. The device operates within a junction temperature range of -40 °C to +175 °C. Key electrical parameters include a maximum gate-emitter voltage of ±20 V, a typical collector-emitter saturation voltage of 2 V at 25 °C, and a total switching energy of 3.5 mJ at Tvj = 25 °C. The package is PG-TO247-4-2.

Feature Summary

Ultra-low loss switching losses achieved through Kelvin emitter pin package combined with Highspeed3 technology
High efficiency performance in hard switching and resonant topologies
Easy parallel switching capability due to positive temperature coefficient in VCEsat
Very soft, fast recovery full current antiparallel diode

Applications

Industrial UPS
Charger
Energy storage
Three-level solar string inverter

Procurement Notes

Verify the component against official Infineon datasheet IFX-AAL108-004 revision 1.10. Confirm the marking code K40MCH3 on the TO-247PLUS-4Pin package. Ensure compliance with JEDEC47/20/22 for industrial applications. Check RoHS compliance and Pb-free lead plating status before integration into designs.

Selection Notes

Select this component for high-frequency applications requiring low switching losses. Consider the 10 µs short circuit withstand time at Tvj = 175 °C for robust protection schemes. Evaluate thermal resistance values (Rth(j-c) 0.3 K/W for IGBT) for heat sink design. Verify gate drive requirements against the 190 nC gate charge specification.

Part Context

This part belongs to the Highspeed3 technology family from Infineon Technologies. It is designed as a discrete power semiconductor device for industrial power conversion. The product spectrum includes PSpice models for simulation purposes. It is distinct from automotive qualified parts and is not compliant with AEC Q100 or AEC Q101 documents.