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The IKY75N120CH7XKSA1 is a high-speed 1200 V TRENCHSTOP™ IGBT 7 Technology device co-packed with a full rated current, soft-commutating, ultra-fast recovery and low Qrr emitter controlled Rapid diode. It features a collector-emitter voltage of 1200 V, a DC collector current of 83 A at 25°C case temperature, and a maximum junction temperature of 175°C. The saturation voltage is 1.7 V at 25°C. It is housed in a TO-247PLUS – 4Pin package.
Verify the exact ordering suffix against official Infineon documentation to ensure correct packaging and marking specifications. Confirm RoHS compliance status and Pb-free lead plating requirements prior to procurement. Cross-reference the datasheet revision history to ensure the latest technical parameters are utilized during design validation.
Select this component for applications requiring high efficiency in high-speed hard switching topologies such as 2-level inverters or 3-level NPC T-type converters. Ensure the thermal management system supports the specified power dissipation limits at the intended operating temperatures. Verify that the gate drive circuitry aligns with the recommended gate resistor values for optimal switching performance.
This part belongs to the TRENCHSTOP™ IGBT 7 family from Infineon Technologies. It utilizes advanced silicon technology to achieve superior switching characteristics compared to previous generations. The device is designed specifically for industrial applications and is qualified according to relevant JEDEC tests.
Direct replacements within the same series include IKY75N120CH3XKSA1 and IKY75N120CS6XKSA1. Verify pinout compatibility and electrical parameter differences before substitution.
No, this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council.
The internal emitter inductance measured 5 mm from the case is 13 nH.