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The IKY75N120CS6XKSA1 is a single IGBT with an anti-parallel diode from the TRENCHSTOP IGBT6 series. It features a PG-TO247-4-2 package and operates at a maximum collector-emitter voltage of 1200 V. The device supports a continuous collector current of 150 A at 25°C, dropping to 75 A at 100°C case temperature. The typical saturation voltage is 1.85 V at 25°C. Maximum power dissipation reaches 880 W at 25°C. Switching energy losses are 2.2 mJ (turn-on) and 2.95 mJ (turn-off). Gate charge is typically 530 nC.
Verify the specific ordering suffix against official Infineon documentation to ensure correct packaging and compliance status. Confirm that the component meets JEDEC qualification standards for industrial applications. Ensure the procurement channel provides valid datasheets and material content data sheets for regulatory compliance checks before integration into designs.
Select this component for high-speed soft-switching applications requiring robust thermal performance. The TO-247-4-2 package offers a Kelvin emitter connection to reduce parasitic inductance. Consider the positive temperature coefficient for parallel operation. Evaluate switching losses against the specific gate resistor requirements to optimize EMI and efficiency balance.
This part belongs to the sixth-generation TRENCHSTOPTM IGBT6 family utilizing Trench and Fieldstop technology. It is designed as a high-speed soft-switching series component. The product spectrum includes various current ratings within the same voltage class. The technology aims to provide optimized performance for industrial power conversion systems.
Consult official Infineon replacement guides for direct substitutes. Verify pinout compatibility and thermal resistance values when considering alternative packages or technologies.