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The IKZ75N65ES5XKSA1 is a single silicon IGBT from the TRENCHSTOP 5 S5 series, housed in a TO-247-4 through-hole package. It features a maximum collector-emitter voltage of 650 V and a continuous collector current of 80 A at 25°C. The device exhibits a collector-emitter saturation voltage of 1.42 V and supports a power dissipation of 395 W. Operating temperatures range from -40°C to +175°C, with a gate-emitter voltage limit of ±20 V.
Verify the specific suffix XKSA1 against official Infineon documentation to confirm lead times and RoHS compliance status. Ensure the ordering part number matches the exact pinout and packaging requirements for your assembly process. Cross-reference the datasheet revision date to validate technical parameters before finalizing procurement orders.
Select this component when a 650 V rating and 80 A continuous current are required in a TO-247-4 footprint. The TRENCHSTOP 5 S5 variant offers specific switching characteristics suitable for frequencies up to 30 kHz. Compare the 1.42 V saturation voltage against system efficiency targets to ensure compatibility with existing thermal designs.
This device belongs to the Infineon TRENCHSTOP 5 discrete IGBT family, which utilizes field-stop trench gate technology. The IKZ prefix indicates a specific product line variant within the broader portfolio of high-efficiency power semiconductors designed for industrial and automotive-grade reliability standards.
IKW75N65ES5 serves as a comparable alternative within the same series, though it utilizes a TO-247-3 package instead of TO-247-4. Verify pinout compatibility and thermal resistance differences before substituting.