IKZA50N65RH5XKSA1

Overview

The IKZA50N65RH5XKSA1 is a CoolSiC hybrid discrete IGBT from the TRENCHSTOP 5 H5 family, packaged in PG-TO247-4-3. It integrates a 650 V silicon IGBT with a half-rated 6th generation CoolSiC Schottky diode. Key electrical ratings include a collector-emitter voltage of 650 V, continuous collector current of 80 A at 25°C, and maximum power dissipation of 305 W. The device features ultra-low switching losses, a gate charge of 120 nC, and a saturation voltage of 1.65 V at 25°C. Operating junction temperature ranges from -40°C to +175°C.

Feature Summary

• Combines TRENCHSTOP 5 IGBT technology with a half-rated 6th generation CoolSiC diode for benchmark efficiency in hard switching topologies.
• Utilizes a four-pin package with an optimized pin-out that simplifies PCB design and improves wave soldering quality through increased clearance between Kelvin emitter and gate pins.
• Achieves ultra-low switching losses via the integration of TRENCHSTOP 5 and CoolSiC technologies alongside a dedicated Kelvin emitter pin.

Applications

• Industrial Switched-Mode Power Supplies (SMPS)
• Solar string inverters
• Industrial Uninterruptible Power Supplies (UPS)
• Energy storage systems
• Chargers

Procurement Notes

Verify the specific suffix XKSA1 against the manufacturer's official documentation to confirm lead plating and compliance status. Confirm the component is suitable for the intended application as it is not qualified according to AEC Q100 or AEC Q101 automotive standards. Ensure thermal management designs account for the specified junction-to-case thermal resistance values provided in the datasheet.

Selection Notes

Select this component for applications requiring high efficiency in hard switching topologies where reduced switching losses are critical. The integrated CoolSiC diode offers superior performance compared to pure silicon devices, allowing for simplified PCB layouts due to the four-pin configuration. Consider the maximum operating junction temperature of 175°C when designing thermal solutions for industrial environments.

Part Context

This device belongs to Infineon's TRENCHSTOP 5 H5 product family, which utilizes next-generation thin-wafer IGBT technology. The series is designed for switching frequencies above 10 kHz, offering significantly improved switching and conduction losses compared to previous generations. The CoolSiC hybrid discrete architecture combines silicon IGBTs with silicon carbide diodes to enhance overall system reliability and power density.

Replacement Considerations

The datasheet identifies this component as a plug-and-play replacement for pure silicon devices. No specific alternative part numbers are documented in the provided source material.

FAQ

Is the IKZA50N65RH5 qualified for automotive applications?

No, the product is explicitly stated as not being qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council.

What is the function of the fourth pin in the TO-247-4 package?

The fourth pin serves as the Kelvin emitter, which helps reduce internal emitter inductance and contributes to the device's ultra-low switching losses.

How does the integrated diode differ from standard silicon diodes?

The device co-packs a half-rated 6th generation CoolSiC Schottky diode, which provides lower reverse recovery charges and improved efficiency compared to conventional silicon diodes.