IKZA75N65RH5XKSA1

Overview

The IKZA75N65RH5XKSA1 is a CoolSiC hybrid discrete component integrating a TRENCHSTOP 5 H5 IGBT with a half-rated 6th generation CoolSiC Schottky diode. It features a 650 V collector-emitter voltage and an 80 A DC collector current at 25°C case temperature. The device utilizes a TO-247-4 package with a Kelvin emitter pin to minimize internal inductance. Maximum power dissipation reaches 395 W at 25°C, while the maximum junction temperature is rated at 175°C.

Feature Summary

• Combines TRENCHSTOP 5 IGBT technology with a half-rated 6th generation CoolSiC diode for ultra-low switching losses.
• Features a four-pin PG-TO247-4-3 package with a dedicated Kelvin emitter pin to reduce internal emitter inductance.
• Provides optimized pin-out for simplified PCB design and improved wave soldering quality due to increased clearance between gate and Kelvin emitter pins.
• Offers benchmark efficiency in hard switching topologies and serves as a plug-and-play replacement for pure silicon devices.

Applications

• Industrial Switched-Mode Power Supplies (SMPS)
• Solar string inverters
• Industrial Uninterruptible Power Supplies (UPS)
• Energy storage systems
• Chargers

Procurement Notes

Verify the specific ordering suffix XKSA1 against official Infineon documentation to confirm package type and compliance status. Confirm that the component meets JEDEC qualification requirements for the intended target applications. Ensure thermal management designs account for the specified maximum junction temperature of 175°C and power dissipation limits under actual operating conditions.

Selection Notes

Select this component when designing high-efficiency hard switching circuits requiring reduced switching losses compared to standard silicon IGBTs. The integrated CoolSiC diode eliminates the need for external anti-parallel diodes, simplifying the circuit topology. Consider the four-pin package layout for applications where minimizing parasitic inductance is critical for performance and electromagnetic interference reduction.

Part Context

This part belongs to the TRENCHSTOP 5 H5 product family, representing a generation of thin-wafer IGBTs designed for switching frequencies above 10 kHz. The series achieves significant reductions in both conduction and switching losses through advanced wafer thickness reduction and trench gate technology. It is positioned as a high-performance solution for industrial power conversion applications demanding higher power density.

Replacement Considerations

IKW75N65RH5XKSA1