IMBG65R026M2HXTMA1

$9.23

Description：SILICON CARBIDE MOSFET
Series：CoolSiC™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:77402d6a9327 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IMBG65R026M2HXTMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is SILICON CARBIDE MOSFET. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IMBG65R026M2HXTMA1

Description：SILICON CARBIDE MOSFET
Series：CoolSiC™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：68A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：15V, 20V
Rds On (Max) @ Id, Vgs：24mOhm @ 34.5A, 20V
Vgs(th) (Max) @ Id：5.6V @ 7mA
Gate Charge (Qg) (Max) @ Vgs：42 nC @ 18 V
Vgs (Max)：+23V, -7V
Input Capacitance (Ciss) (Max) @ Vds：1499 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：263W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TO263-7-12
Package / Case：TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Single FETs, MOSFETs datasheet and documents for IMBG65R026M2HXTMA1

IMBG65R026M2HXTMA1

Single FETs, MOSFETs Overview

The IMBG65R026M2HXTMA1 is a Silicon Carbide (SiC) MOSFET from Infineon Technologies, part of the CoolSiC™ G2 series. It features a PG-TO263-7 package and N-channel configuration with a drain-source voltage rating of 650 V. The device offers a typical on-state resistance of 26 mΩ at 25°C and a maximum pulsed drain current of 216 A. Key electrical parameters include a gate charge of 42 nC, a threshold voltage of 4.5 V, and an operating junction temperature range up to 175°C.

Single FETs, MOSFETs Feature Summary

Built on robust second-generation silicon carbide trench technology for superior reliability
Features XT interconnection technology for best-in-class thermal performance
Delivers ultra-low switching losses and benchmark gate threshold voltage
Robust against parasitic turn-on even with zero volt turn-off gate voltage

Single FETs, MOSFETs Applications

Switching Mode Power Supplies (SMPS)
Solar PV inverters
Energy storage and battery formation systems
Uninterruptible Power Supplies (UPS)
Electric vehicle charging infrastructure
Motor drives

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code suffix matches the required package variant. Confirm that the source and driver source pins are not exchangeable in the application design to prevent malfunction. Ensure compliance with JEDEC standards for industrial applications during validation. Check datasheet recommendations regarding operating conditions not exceeding 80% of maximum ratings for optimal lifetime.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high efficiency and power density within the 650 V class. Consider the low gate charge and fast switching characteristics for high-frequency operation. Evaluate the thermal resistance and package type for heat dissipation requirements. Verify compatibility with bipolar driving schemes and flexible driving voltage options.

Single FETs, MOSFETs Part Context

This device belongs to the CoolSiC™ MOSFET 650 V G2 family, leveraging Infineon's advanced silicon carbide technology. It represents the second generation of trench MOSFETs designed to enhance system performance and ease of use. The product line targets cost-effective solutions for demanding power electronics applications.