IMCQ120R040M2HXTMA1

$9.13

Description：SIC DISCRETE
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:0c775d9c2470 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IMCQ120R040M2HXTMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is SIC DISCRETE. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IMCQ120R040M2HXTMA1

Description：SIC DISCRETE
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

Single FETs, MOSFETs datasheet and documents for IMCQ120R040M2HXTMA1

IMCQ120R040M2HXTMA1

Single FETs, MOSFETs Overview

The IMCQ120R040M2HXTMA1 is a CoolSiC™ 1200 V SiC MOSFET G2 in a PG-HDSOP-22-U03 Q-DPAK package with top-side cooling. It features a drain-source voltage of 1200 V, continuous DC drain current of 56 A at Tc=25°C, and an on-state resistance of 39.6 mΩ at Tvj=25°C. The device supports overload operation up to a virtual junction temperature of 200°C, has a short-circuit withstand time of 2 µs, and utilizes .XT interconnection technology for thermal performance.

Single FETs, MOSFETs Feature Summary

Very low switching losses
Robust against parasitic turn-on with 0 V turn-off capability
Robust body diode for hard commutation

Single FETs, MOSFETs Applications

Solid-state circuit breaker / Solid-state relay
EV Charging
Online UPS / Industrial UPS
String inverter
General purpose drives (GPD)

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix XTMA1 against official Infineon documentation to confirm the reel packaging configuration. Ensure that the selected gate driver aligns with the recommended turn-on and turn-off voltage windows specified in the datasheet. Confirm industrial qualification status according to JEDEC standards before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component for high-efficiency power conversion requiring top-side cooling capabilities. The benchmark gate threshold voltage facilitates robust drive compatibility. Consider the 200°C overload capability for applications demanding higher thermal margins. Verify that the PCB layout accommodates the specific pin definitions for source and Kelvin sense contacts to prevent malfunction.

Single FETs, MOSFETs Part Context

This part belongs to the second generation of CoolSiC™ 1200 V MOSFETs from Infineon Technologies. It is designed for industrial applications and qualified according to relevant JEDEC tests. The device integrates advanced trench technology to minimize application losses while maintaining high operational reliability in harsh environments.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon substitution guides for verified alternatives. Cross-referencing requires matching voltage ratings, package types, and thermal characteristics to ensure functional equivalence without compromising system safety or performance.