IMT1AT108

Overview

The IMT1AT108 is a dual PNP bipolar junction transistor array manufactured by Rohm Semiconductor. It features a maximum collector-emitter voltage of 50V and a continuous collector current of 150mA per transistor. The device operates with a DC current gain (hFE) minimum of 120 at 1mA and 6V, and has a transition frequency of 140MHz. Maximum power dissipation is rated at 300mW, with a maximum junction temperature of 150°C. It is housed in an SMT6 package, equivalent to SC-74 or SOT-457, designed for surface mount applications.

Feature Summary

• Dual PNP configuration integrated into a compact surface-mount package
• High switching speed capability with 140MHz transition frequency
• Integrated base resistors simplify circuit design and reduce component count

Applications

• General-purpose switching circuits
• Driver stages for logic interfaces
• Signal amplification in low-power applications

Procurement Notes

Verify the specific ordering suffix to confirm the tape and reel quantity matches production requirements. Confirm RoHS compliance status as indicated in the official datasheet. Check for any regional export control classifications such as ECCN EAR99 before finalizing procurement plans.

Selection Notes

Select this component when a dual PNP configuration is required in a small footprint. Ensure the 150mA current rating and 50V voltage limits accommodate the load conditions. Consider the 300mW power dissipation limit and thermal management needs for the SMT6 package during high-duty cycle operations.

Part Context

This part belongs to the IMT1 series of dual bipolar transistor arrays from Rohm Semiconductor. It serves as a pre-biased solution, integrating internal resistors to facilitate direct interfacing with digital logic outputs without external biasing components.

Replacement Considerations

The IMT1AT110 is listed as a similar product within the same series. Verify pin compatibility and electrical parameter alignment before substitution.