SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IMT2AT108 is a dual PNP complex transistor manufactured by Rohm Semiconductor, housed in an SMT6 (SC-74/SOT-457) surface-mount package. It features a maximum collector-emitter voltage of 50V and a continuous collector current of 150mA per transistor. The device has a maximum power dissipation of 300mW and a transition frequency of 140MHz. DC current gain (hFE) is specified at a minimum of 120 at 1mA and 6V. The component supports a maximum junction temperature of 150°C and is currently marked as not recommended for new designs.
Verify the obsolete status before procurement, as this part is not recommended for new designs. Confirm availability through authorized distributors, noting that lead times may vary due to limited production runs. Ensure the ordering suffix matches the required tape-and-reel quantity of 3000 units for standard packaging compliance.
Select this component when a dual PNP pre-biased transistor is required in a small surface-mount package. Compare against the UMx1N series for potential active alternatives if new design support is critical. Evaluate the 150mA current rating and 50V voltage limits against specific load requirements to ensure adequate headroom for the intended application environment.
The IMT2AT108 belongs to Rohm's IMT series of complex transistors, which integrate bipolar junction transistors with internal biasing resistors. This series is designed to reduce component count and board space in digital and analog switching applications. The SMT6 package provides a compact solution for high-density PCB layouts.
The UMx1N series is listed as a similar specification alternative. Verify pin compatibility and electrical parameters before substitution. Check if the replacement part is actively supported for new designs.