IMX25T110

Overview

The IMX25T110 is a dual NPN bipolar junction transistor array manufactured by Rohm Semiconductor. It features a maximum collector-emitter voltage (Vceo) of 20V and a continuous collector current (Ic) of 300mA. The device has a power dissipation rating of 300mW and a transition frequency (fT) of 35MHz. DC current gain (hFE) is specified at a minimum of 820 when tested at 4mA collector current and 2V collector-emitter voltage. The saturation voltage is limited to 100mV at 3mA base current and 30mA collector current. The component operates within a junction temperature range up to 150°C and is housed in an SMT6 package, equivalent to SC-74 or SOT-457.

Feature Summary

• Dual NPN configuration integrating two transistors in a single surface-mount package for space-efficient circuit design.
• High DC current gain capability suitable for amplification applications requiring significant signal boosting.
• Integrated thermal management allowing operation at elevated junction temperatures up to 150°C.

Applications

• General-purpose switching circuits requiring dual NPN logic control.
• Low-frequency amplification stages utilizing high current gain characteristics.
• Interface drivers where compact dual-transistor topology reduces board space.

Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest datasheet to ensure correct packaging format, such as tape and reel or cut tape. Confirm RoHS compliance status and lead times directly with authorized distributors, as availability may vary. Ensure the procurement documentation matches the exact part number including all alphanumeric suffixes to avoid receiving variants with different electrical tolerances or packaging specifications.

Selection Notes

Select this component when a dual NPN configuration is required within a small SOT-457 footprint. The 300mA current rating and 20V voltage limit define its operational boundaries for low-power switching tasks. Consider the 35MHz transition frequency for applications not exceeding moderate signal speeds. Evaluate the 300mW power dissipation limit against thermal constraints in the final assembly to ensure reliable operation under load conditions without external heat sinking.

Part Context

The IMX25T110 belongs to the IMX series of dual NPN transistors from Rohm Semiconductor. This series typically utilizes silicon technology optimized for general-purpose electronic applications. The device shares the SMT6/SOT-457 package form factor common across multiple Rohm discrete transistor families, facilitating standardized PCB layout practices for dual-component designs.

Replacement Considerations

Cross-reference with other dual NPN transistors in the SOT-457 package having comparable Vceo, Ic, and hFE ratings. Verify pinout compatibility before substitution. Check if alternative parts offer higher transition frequencies or lower saturation voltages if performance margins are tight.