IMX2T108

IMX2T108

  • Description:TRANS 2NPN DUAL 50V 150MA SMT6
  • Series:-

SKU:c90aee7ea64d Category: Brand:

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Product Detailed Parameters

  • Description:TRANS 2NPN DUAL 50V 150MA SMT6
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:2 NPN (Dual)
  • Current - Collector (Ic) (Max):150mA
  • Voltage - Collector Emitter Breakdown (Max):50V
  • Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 6V
  • Power - Max:300mW
  • Frequency - Transition:180MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-74, SOT-457
  • Supplier Device Package:SMT6
  • Grade:-
  • Qualification:-

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IMX2T108

Overview

The IMX2T108 is a dual NPN bipolar junction transistor (BJT) array manufactured by Rohm Semiconductor. It features a maximum collector-emitter voltage of 50V and a continuous collector current of 150mA per transistor. The device operates with a DC current gain (hFE) ranging from 120 to 560 at 1mA and 6V, and has a transition frequency of 180MHz. Power dissipation is rated at 300mW, with a maximum junction temperature of 150°C. It is housed in an SMT6 package, equivalent to SC-74 or SOT-457, containing six terminals.

Feature Summary

  • Dual NPN configuration within a compact surface-mount package
  • High-frequency operation capability up to 180MHz
  • Wide DC current gain range for flexible biasing

Applications

  • General-purpose switching circuits
  • Amplifier stages requiring dual complementary-like structures
  • High-frequency signal processing applications

Procurement Notes

Verify the obsolete status before procurement, as the component is marked as not recommended for new designs. Confirm availability through authorized distributors, noting that supply may be limited to existing customer needs rather than active production runs. Ensure the ordering suffix matches the required tape-and-reel quantity.

Selection Notes

Select this part when a dual NPN structure is required in a small footprint. Compare hFE ranges and power dissipation limits against circuit requirements. Consider the IMX3T108 as a similar specification alternative if available, though both share the same electrical characteristics and package type. Verify thermal management capabilities for the SMT6 package.

Part Context

The IMX2T108 belongs to Rohm's complex transistor series, specifically designed as a dual BJT array. It serves as a replacement for discrete dual transistors, saving board space. The product line includes variants like the IMX5T108, which offers different voltage ratings. This component is part of Rohm's portfolio for standard-level consumer electronics applications.

Replacement Considerations

The UMx1N is listed as a similar level replacement with identical specifications. The IMX3T108 shares the same electrical parameters and package. Verify pin compatibility and thermal performance when substituting.

IMX2T108IMX2T108

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