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The IMX2T108 is a dual NPN bipolar junction transistor (BJT) array manufactured by Rohm Semiconductor. It features a maximum collector-emitter voltage of 50V and a continuous collector current of 150mA per transistor. The device operates with a DC current gain (hFE) ranging from 120 to 560 at 1mA and 6V, and has a transition frequency of 180MHz. Power dissipation is rated at 300mW, with a maximum junction temperature of 150°C. It is housed in an SMT6 package, equivalent to SC-74 or SOT-457, containing six terminals.
Verify the obsolete status before procurement, as the component is marked as not recommended for new designs. Confirm availability through authorized distributors, noting that supply may be limited to existing customer needs rather than active production runs. Ensure the ordering suffix matches the required tape-and-reel quantity.
Select this part when a dual NPN structure is required in a small footprint. Compare hFE ranges and power dissipation limits against circuit requirements. Consider the IMX3T108 as a similar specification alternative if available, though both share the same electrical characteristics and package type. Verify thermal management capabilities for the SMT6 package.
The IMX2T108 belongs to Rohm's complex transistor series, specifically designed as a dual BJT array. It serves as a replacement for discrete dual transistors, saving board space. The product line includes variants like the IMX5T108, which offers different voltage ratings. This component is part of Rohm's portfolio for standard-level consumer electronics applications.
The UMx1N is listed as a similar level replacement with identical specifications. The IMX3T108 shares the same electrical parameters and package. Verify pin compatibility and thermal performance when substituting.