IMX9T110

Overview

The IMX9T110 is a dual NPN bipolar junction transistor (BJT) array manufactured by ROHM Semiconductor. It features a maximum collector-emitter voltage (VCEO) of 20 V and a continuous collector current (Ic) of 500 mA. The device operates with a power dissipation (Pd) of 300 mW and exhibits a transition frequency (fT) of 350 MHz. DC current gain (hFE) ranges from 560 to 2700 at 10 mA and 3 V. The saturation voltage (Vce(sat)) is 400 mV at 20 mA base and 500 mA collector current. It utilizes an SOT-457 (SMT6) surface-mount package and supports a maximum operating temperature of +150°C.

Feature Summary

• Dual NPN configuration within a compact SOT-457 surface-mount package
• High DC current gain ranging from 560 to 2700 under specified test conditions
• Wide operating junction temperature capability up to +150°C
• Low saturation voltage for efficient switching performance

Applications

• General-purpose switching circuits
• Amplifier stages requiring dual NPN arrays
• Digital logic interface applications

Procurement Notes

Verify component status before integration, as the IMX9T110 is designated as Not Recommended for New Designs (NRND). Existing production continues for legacy support. Confirm RoHS compliance and specific ordering suffixes such as DKR or CT when sourcing. Ensure supply chain stability due to potential phase-out implications for new product development cycles.

Selection Notes

Select this component for designs requiring dual NPN transistors in a small footprint. Verify that the 20 V voltage rating and 500 mA current capacity meet circuit requirements. Consider the NRND status if designing for long-term production. Compare hFE specifications against load requirements to ensure adequate drive capability. Evaluate thermal management needs given the 300 mW power dissipation limit in the SOT-457 package.

Part Context

The IMX9T110 belongs to the IMX9 series of dual NPN transistors from ROHM Semiconductor. This series provides integrated dual configurations to save board space compared to discrete components. The part is classified under Bipolar Transistor Arrays. It shares the IMX9 base part number but includes specific suffixes for packaging variations like tape and reel or cut tape formats.

Replacement Considerations

The BC817DS,115 from Nexperia USA Inc. is listed as a similar replacement option. Verify pin compatibility and electrical parameter alignment before substitution. Check if the alternative meets the specific hFE and voltage requirements of the original design.