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Product Detailed Parameters
- Description：TRANS NPN/PNP 50V 150MA SMT6
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：1 NPN, 1 PNP
- Current - Collector (Ic) (Max)：150mA
- Voltage - Collector Emitter Breakdown (Max)：50V
- Vce Saturation (Max) @ Ib, Ic：400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：120 @ 1mA, 6V
- Power - Max：300mW
- Frequency - Transition：180MHz, 140MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-74, SOT-457
- Supplier Device Package：SMT6
- Grade：-
- Qualification：-
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Overview
The IMZ2AT108 is a complex bipolar transistor array manufactured by Rohm Semiconductor, featuring one NPN and one PNP transistor within an SMT6 (SOT-457) surface-mount package. It supports a collector-emitter voltage of 50V for both polarities and a continuous collector current of 150mA. The device offers a DC current gain (hFE) ranging from 120 to 560. With a maximum power dissipation of 300mW and a junction temperature rating up to 150°C, it serves as a compact solution for dual-transistor applications requiring mixed polarity configurations.
Feature Summary
- Integrates complementary NPN and PNP transistors in a single ultra-small package
- Provides high DC current gain suitable for amplification and switching tasks
- Supports surface-mount installation with robust thermal characteristics
Applications
- Differential amplifier circuits
- High-frequency crystal oscillator starters
- General-purpose signal processing stages
Procurement Notes
Verify the specific ordering suffix and packaging configuration when sourcing. Confirm supply status as the component may be designated for existing designs rather than new recommendations. Ensure compatibility with standard SMT6 footprint dimensions during procurement planning.
Selection Notes
Select this component when a matched NPN/PNP pair is required in a minimal footprint. Compare hFE ranges and VCEO ratings against circuit requirements. Consider the 300mW power dissipation limit for thermal management in dense PCB layouts.
Part Context
This part belongs to Rohm's complex transistor series, designed to replace discrete dual-transistor setups. It shares the SMT6 package form factor with other ROHM devices like the IMX2T108 and IMD16AT108, offering space savings while maintaining electrical performance standards for consumer and industrial electronics.
Replacement Considerations
The UMZ1N is listed as a similar specification alternative. Verify pinout compatibility and electrical parameter alignment before substitution. Check if the replacement meets the same automotive or industrial qualification standards if applicable.
