SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IMZ4T108 is a dual bipolar junction transistor array manufactured by ROHM Semiconductor, featuring one NPN and one PNP transistor within a single SMT6 package. It operates with a maximum collector-emitter voltage of 32V and supports a continuous collector current of 500mA. The device utilizes silicon technology and is designed for surface mount installation in the SC-74 compatible footprint. It offers a power dissipation rating of 300mW and functions reliably across an operating temperature range from -55°C to +150°C.
Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status via official documentation before integration. Ensure storage conditions remain within specified limits to maintain reliability. Check for obsolescence notices as availability may vary. Validate pinout compatibility with existing PCB layouts during design finalization.
Select this component when a matched NPN/PNP pair is required in minimal board space. Consider the 32V voltage limit and 500mA current capacity against circuit demands. Evaluate thermal management requirements given the 300mW dissipation rating in the small SMT6 package. Compare performance metrics against single discrete transistors if higher individual ratings are needed.
This part belongs to ROHM's lineup of complex transistor arrays designed for miniaturization. It replaces multiple discrete components with a single integrated solution. The SMT6 packaging aligns with industry standards for compact surface-mount designs. It serves as a functional alternative to separate NPN and PNP devices in space-sensitive applications.
The UMZ1N is identified as a similar specification replacement option. Verify electrical parameters and pinout compatibility before substitution. Ensure the alternative meets all thermal and voltage requirements of the original design.