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— IC芯片 | 连接器 | 传感器 | 被动器件 —
INA592IDT is listed in the Instrumentation, Op Amps, Buffer Amps range at ChipApex. The manufacturer field lists Texas Instruments. Its product description is IC OPAMP DIFF 1 CIRCUIT 8SOIC. Review the specifications below when checking this part for your BOM.
The INA592IDT is a high-precision, wide-bandwidth e-trim difference amplifier from Texas Instruments. It integrates a precision operational amplifier and a matched resistor network to provide gain configurations of G = 1/2 or G = 2. Key electrical specifications include a maximum input offset voltage of 40 μV, a low offset voltage drift of ±2 μV/°C, and a noise density of 18 nV/√Hz at 1 kHz for the G = 1/2 configuration. The device features a 2 MHz gain-bandwidth product, a slew rate of 18 V/μs, and supports a wide supply range of 4.5 V to 36 V (single) or ±2.25 V to ±18 V (dual). It operates within a temperature range of –40°C to +125°C.
Verify the specific package variant, as the INA592 family includes SOIC-8, VSSOP-8, and VSON-10 options. Confirm that the IDT suffix corresponds to the SOIC-8 package type required for your PCB layout. Ensure compatibility with the specified single or dual supply voltage ranges during design validation.
Select the INA592 when a fixed gain of 1/2 or 2 is required with high precision and wide bandwidth. It is suitable for applications needing low offset and drift without the complexity of external resistor networks. Consider the G = 1/2 configuration for lower noise and higher bandwidth compared to the G = 2 setting.
The INA592 belongs to Texas Instruments' e-trim difference amplifier series, designed to replace discrete resistor-based differential amplifier circuits. It simplifies design by integrating precision resistors directly on-chip, offering improved tracking and thermal stability compared to external resistor networks.
Public confirmed substitute part numbers are not provided in the source material.
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