IPA65R310CFDXKSA2

Single FETs, MOSFETs Overview

The IPA65R310CFDXKSA2 is a single N-channel CoolMOS CFD2 power MOSFET manufactured by Infineon Technologies. It features a 650 V drain-source voltage rating and a continuous drain current of 11.4 A at case temperature. The device has a maximum on-resistance of 310 mΩ and a gate charge of 41 nC at 10 V. It operates within a junction temperature range of -55°C to 150°C with a thermal dissipation capacity of 32 W in the PG-TO220-FP through-hole package.

Single FETs, MOSFETs Feature Summary

• Utilizes CoolMOS CFD2 technology for optimized switching performance
• Features an isolated flange mount configuration for efficient heat dissipation
• Designed for high-voltage applications with robust avalanche energy capability

Single FETs, MOSFETs Applications

• High-frequency power conversion circuits
• Industrial motor drive systems
• Uninterruptible power supply (UPS) units

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix KSA2 against official Infineon documentation to confirm pinout and packaging details. Ensure the component matches the PG-TO220-FP form factor required for your thermal management design. Cross-reference the manufacturer part number with authorized distributors to avoid counterfeit products. Confirm RoHS compliance status via the latest datasheet before integration into regulated assemblies.

Single FETs, MOSFETs Selection Notes

Select this component when a 650 V rating and low on-resistance are critical for efficiency. The through-hole PG-TO220-FP package suits designs requiring robust mechanical mounting and direct heatsink attachment. Consider the 41 nC gate charge for driver compatibility in medium-frequency switching applications. Evaluate thermal resistance requirements against the 32 W dissipation limit for your specific enclosure constraints.

Single FETs, MOSFETs Part Context

This device belongs to the CoolMOS CFD2 family, representing advanced superjunction technology from Infineon. It succeeds earlier generations by offering improved figure-of-merit characteristics. The part is distinct from standard planar MOSFETs due to its vertical doping profile, enabling higher breakdown voltages with lower conduction losses in power electronics.

Single FETs, MOSFETs Replacement Considerations

Check for IPA65R310CFDXKSA1 as a potential variant with identical electrical specifications but different packaging or trailing zeros. Verify pin compatibility before substitution.