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IPB120N06S403ATMA2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 60V 120A TO263-3. Review the specifications below when checking this part for your BOM.
The IPB120N06S4-03 is an N-channel enhancement mode OptiMOS-T2 power transistor. It features a maximum drain-source voltage of 60 V and a continuous drain current of 120 A at 25°C. The SMD version has a maximum on-state resistance of 2.8 mΩ. It supports a pulsed drain current of 480 A and operates within a temperature range of -55°C to +175°C. The device is AEC-Q101 qualified, offers 100% avalanche testing, and utilizes a PG-TO263-3-2 package.
Verify the specific ordering suffix matches the required package variant (PG-TO263-3-2). Confirm that the component meets the necessary AEC-Q101 qualification standards for your target application. Ensure compatibility with RoHS compliance requirements. Check for any specific marking or traceability needs associated with the manufacturing batch.
Select this component for applications requiring high current handling in a compact surface-mount package. Consider the 2.8 mΩ maximum RDS(on) for efficiency calculations. Evaluate the thermal resistance characteristics against your system's cooling capabilities. Verify gate charge parameters for switching speed requirements in your circuit design.
This part belongs to Infineon's OptiMOS-T2 family, designed for automotive and industrial power switching. It complements other variants like IPB120N04S4-02 and IPB120N08S4-03 by offering a 60V rating. The technology focuses on minimizing conduction losses while maintaining high reliability under harsh conditions.
IPB120N06S4H1ATMA2
Yes, it is AEC-Q101 qualified and designed for automotive environments.
The maximum pulsed drain current is 480 A at 25°C case temperature.
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