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Product Detailed Parameters
- Description：TRENCH >=100V
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The IPB133N12NM6ATMA1 is an N-channel Power MOSFET from Infineon's OptiMOS 6 family, designed for high-efficiency switching applications. It features a maximum drain-source voltage (VDS) of 120 V and a typical gate charge (QG) of 15 nC at 10 V. The device exhibits a maximum on-resistance (RDS(on)) of 13.3 mΩ at 10 V gate drive. It supports a continuous drain current (ID) of up to 55 A at 25°C and operates within a junction temperature range of -55°C to 175°C. Packaged in the PG-TO263-3 (D²PAK) format, it is supplied in tape and reel quantities.
Feature Summary
- Industry-leading balance between RDS(on) and FOMs for optimized switch and conduction losses
- Industrial qualification ensuring superior power handling and ruggedness
- Normal level gate threshold enabling flexible PCB material choices
Applications
- Power tools and gardening equipment
- Adapters and fast chargers
- Solar inverters and telecom systems
- E-scooters and light electric vehicles
Procurement Notes
Verify the specific ordering suffix ATMA1 against the manufacturer's official datasheet to confirm package type and packing method. Ensure compatibility with industrial qualification standards required for the target application environment before finalizing procurement decisions.
Selection Notes
Select this component when a 120 V rating and low gate charge are critical for high-frequency switching efficiency. The D²PAK package offers a robust solution for moderate current requirements where thermal performance and system reliability are prioritized over extreme current density.
Part Context
This part belongs to the OptiMOS 6 generation, representing Infineon's advanced silicon technology for 120 V applications. It succeeds previous generations by offering improved figure-of-merit metrics, allowing designers to achieve higher power density and system efficiency in compact form factors.
Replacement Considerations
Direct cross-compatibility should be verified against other OptiMOS 6 variants with identical pinouts and electrical parameters. Consider IPB133N12NM6 as the non-tape/reel equivalent if packaging differences do not impact assembly processes.
