IPB156N22NFDATMA1

$6.63

Description：MOSFET N-CH 220V 72A TO263-3
Series：OptiMOS™ FD
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:6e2d1d01b086 Category: Single FETs, MOSFETs Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

IPB156N22NFDATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 220V 72A TO263-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IPB156N22NFDATMA1

Description：MOSFET N-CH 220V 72A TO263-3
Series：OptiMOS™ FD
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：220 V
Current - Continuous Drain (Id) @ 25°C：72A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：15.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs：87 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：6930 pF @ 110 V
FET Feature：-
Power Dissipation (Max)：300W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TO263-3-2
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for IPB156N22NFDATMA1

IPB156N22NFDATMA1

Single FETs, MOSFETs Overview

The IPB156N22NFD is an N-channel OptiMOS FD power transistor with a 220 V drain-source breakdown voltage. It features a maximum on-resistance of 15.6 mΩ and supports continuous drain currents up to 72 A at 25°C case temperature. The device operates up to 175°C junction temperature and includes a fast diode with reduced reverse recovery charge. Key dynamic parameters include a total gate charge of 87 nC max and a reverse recovery time of 140 ns max.

Single FETs, MOSFETs Feature Summary

Optimized for hard commutation ruggedness
Fast Diode (FD) with reduced Qrr
Very low on-resistance RDS(on)
Qualified according to JEDEC standards

Single FETs, MOSFETs Applications

Hard commutation applications
Target applications requiring JEDEC qualification

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code matches the required package variant PG-TO 263-3. Confirm that the Pb-free lead plating and RoHS compliance meet your environmental requirements. Ensure the halogen-free status aligns with IEC61249-2-21 specifications. Cross-reference the marking code 156N22NF for identification during assembly and inspection processes.

Single FETs, MOSFETs Selection Notes

Select this component when high current handling and low conduction losses are critical. The 220 V rating suits medium-voltage switching applications. Consider the thermal resistance values for heatsinking design. Evaluate the avalanche energy capability if inductive load switching is expected. Verify gate drive compatibility with the specified threshold and plateau voltages.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's OptiMOS FD family, designed for enhanced performance in demanding power switching environments. The FD designation indicates the integration of a fast recovery body diode. The PG-TO 263-3 package provides robust mechanical stability and efficient thermal dissipation capabilities for surface-mount implementations.