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IPB240N04S4R9ATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 40V 240A TO263-7. Review the specifications below when checking this part for your BOM.
The IPB240N04S4-R9 is an N-channel OptiMOS-T2 power transistor in a PG-TO263-7-3 package. It features a 40 V drain-source voltage and a maximum continuous drain current of 240 A at 25°C case temperature. The device exhibits an ultra-low on-state resistance (Rds(on)) of 0.87 mΩ at Vgs=10V and Id=100A. It supports a peak pulsed drain current of 960 A and operates up to a junction temperature of 175°C. Key electrical parameters include a gate threshold voltage of 2.0–4.0 V, total gate charge of 220–290 nC, and single-pulse avalanche energy of 750 mJ.
Verify the specific ordering code matches the required suffix and package variant. Confirm that the component meets the necessary automotive qualification standards if used in regulated environments. Ensure thermal management designs account for the specified thermal resistance values to maintain safe operating temperatures during operation.
Select this component for high-current applications requiring low conduction losses. Consider the 40 V rating and 240 A current capacity when designing power stages. Evaluate the thermal performance based on the junction-to-case resistance and ensure adequate heat sinking or PCB copper area to handle the specified power dissipation limits effectively.
This part belongs to Infineon's OptiMOS-T2 family, designed for low-voltage, high-current switching applications. The technology focuses on minimizing on-resistance while maintaining high reliability. The PG-TO263-7-3 package provides efficient thermal dissipation capabilities suitable for surface-mount assembly processes.
Consult official replacement lists for direct substitutes. Verify pin compatibility and electrical specifications before swapping components.
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