IPB80P03P4L04ATMA2

$3.22

Description：MOSFET P-CH 30V 80A TO263-3
Series：OptiMOS™ P2
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:695e2e085e0b Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

IPB80P03P4L04ATMA2 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 30V 80A TO263-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for IPB80P03P4L04ATMA2

Description：MOSFET P-CH 30V 80A TO263-3
Series：OptiMOS™ P2
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：4.4mOhm @ 80A, 10V
Vgs(th) (Max) @ Id：2V @ 253µA
Gate Charge (Qg) (Max) @ Vgs：160 nC @ 10 V
Vgs (Max)：+5V, -16V
Input Capacitance (Ciss) (Max) @ Vds：11300 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：137W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-TO263-3-2
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for IPB80P03P4L04ATMA2

IPB80P03P4L04ATMA2

Single FETs, MOSFETs Overview

The IPB80P03P4L-04 is a P-channel OptiMOS-P2 power transistor designed for automotive applications. It features a PG-TO263-3-2 package with a maximum drain-source voltage of -30 V and a continuous drain current of -80 A at 25°C. The device exhibits a typical on-state resistance of 3.4 mΩ at VGS=-10V and supports an operating temperature range from -55°C to +175°C. It includes an integrated body diode with a forward current rating of -80 A.

Single FETs, MOSFETs Feature Summary

Logic-level enhancement mode operation suitable for direct drive by standard logic interfaces
Automotive qualification compliant with AEC standards for high reliability
Robust avalanche energy handling capability verified through 100% testing

Single FETs, MOSFETs Applications

Reverse battery protection circuits
High-side switching in automotive power distribution
Load management systems requiring high current handling

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix matches the required package variant, as the base part number covers multiple packages including PG-TO263-3-2, PG-TO262-3-1, and PG-TO220-3-1. Confirm that the component meets the necessary RoHS compliance requirements for your assembly process. Ensure the selected variant aligns with your thermal management design constraints given the specified junction-to-case thermal resistance.

Single FETs, MOSFETs Selection Notes

Select this component when a P-channel solution is required for 30 V automotive systems. The logic-level gate threshold allows for efficient driving without additional level shifters. Consider the thermal resistance values carefully if operating near the maximum temperature limits. The integrated avalanche robustness makes it suitable for inductive load switching environments common in vehicle electronics.

Single FETs, MOSFETs Part Context

This device belongs to Infineon's OptiMOS-P2 family, which utilizes planar trench technology for low on-resistance. It is engineered specifically for the demanding electrical and thermal conditions found in modern automotive electronic control units. The product line emphasizes durability and efficiency in power switching applications.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include IPI80P03P4L-04 (PG-TO262-3-1) and IPP80P03P4L-04 (PG-TO220-3-1). These variants share identical electrical characteristics but differ in physical package dimensions and mounting style. Verify footprint compatibility before substitution.

Single FETs, MOSFETs FAQ

What is the maximum single-pulse avalanche energy?

The device can withstand a single-pulse avalanche energy of 410 mJ at an avalanche current of -80 A.

Is the gate threshold voltage sensitive to temperature changes?

Yes, the gate threshold voltage varies with junction temperature, typically ranging from -1.0 V to -2.0 V at 25°C, with characteristic curves provided in the datasheet for different temperatures.