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IPD031N06L3GATMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 60V 100A TO252-3. Review the specifications below when checking this part for your BOM.
The IPD031N06L3GATMA1 is an N-channel enhancement mode MOSFET from Infineon's OptiMOS 3 series, housed in a TO-252 (DPAK) surface-mount package. It features a drain-source voltage of 60 V and a continuous drain current of 100 A at 25°C. The device exhibits a maximum on-resistance of 2.5 mΩ and a gate charge of 79 nC. It supports a power dissipation of 167 W with an operating temperature range spanning from -55°C to +175°C.
Verify the complete part number including suffixes against official manufacturer documentation to ensure correct configuration. Confirm that the component meets specific environmental compliance requirements such as REACH or SVHC before integration into final assemblies.
Select this component when high current handling capability is required within a standard DPAK footprint. Evaluate thermal management strategies based on the specified power dissipation limits and junction-to-case thermal resistance characteristics.
This part belongs to the OptiMOS 3 family designed for general-purpose switching applications. It utilizes silicon planar technology to achieve robust performance metrics suitable for industrial and consumer electronics environments requiring efficient power conversion.
Consult official replacement guides for cross-reference options. Verify pinout compatibility and electrical parameter alignment before substituting with alternative manufacturers' components.
The absolute maximum gate-source voltage is rated at ±20 V.
Yes, the component is available in lead-free packages compliant with RoHS directives.
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